This data sheet introduces the features of the SST SuperFlash E12 series
The SST25VF080B is an 8‑Mbit SPI serial flash memory from SST (Silicon Storage Technology). It operates from 2.7 V to 3.6 V, supports both SPI Mode 0 and Mode 3, and offers high‑speed read up to 50 MHz. The device features uniform 4 KB sectors, 32 KB and 64 KB overlay blocks, and a low‑power design with typical active read current of 10 mA and standby current of 5 µA.
The datasheet provides detailed pin descriptions, memory organization, command set, electrical specifications, and packaging options (8‑lead SOIC and 8‑contact WSON). It also lists endurance (100 000 cycles) and data‑retention specifications (>100 years) for reliable long‑term use.
| Active Read Current | 10 mA (typical) |
|---|---|
| Standby Current | 5 µA (typical) |
| Temperature Range – Commercial | 0 °C to +70 °C |
| Temperature Range – Industrial | -40 °C to +85 °C |
| Maximum Read Frequency | 50 MHz (High‑Speed Read) |
| Endurance | 100 000 cycles (typical) |
| Data Retention | >100 years |
| Package Types | 8‑lead SOIC (200 mil) and 8‑contact WSON (6 mm × 5 mm) |
| Memory Density | 8 Mbit |
The high‑speed read instruction supports up to 50 MHz.
It is rated for 100 000 program/erase cycles (typical).
The device is offered in an 8‑lead SOIC (200 mil) and an 8‑contact WSON (6 mm × 5 mm) package.