This document introduces the features and characteristics of the HE578C single-chip integrated amplifier, including gain and frequency curves, VSWR and frequency curves, noise and frequency curves, and power and frequency curves. The integrated amplifier has wide bandwidth, small size, and input and output impedance matching of 50Ω, and is suitable for military temperature working conditions.
The HE578C is a monolithic integration RF amplifier covering a frequency range of 0.1 GHz to 10 GHz. It offers a small‑signal gain of about 10 dB with a gain flatness of ≤0.5 dB and input/output VSWR not exceeding 2.0:1. Typical output power is 13‑14 dBm while the maximum input power is +20 dBm.
The device is supplied in a fully sealed package suitable for operation from –55 °C to +185 °C, with a storage temperature limit of +125 °C. It operates from a 12 V supply. Mechanical dimensions and mounting details are provided in the accompanying package drawing, and contact information for HBMMC is listed for further support. This manual is written in Chinese.
| Frequency range | 0.1‑10.0 GHz |
|---|---|
| Small‑signal gain | 10 dB |
| Gain flatness | ≤0.5 dB |
| Input VSWR | ≤2.0:1 |
| Typical output power | 13‑14 dBm |
| Maximum input power | +20 dBm |
| Operating temperature | -55 °C to +185 °C |
| Maximum storage temperature | +125 °C |
It operates from 0.1 GHz to 10.0 GHz.
The maximum input power is +20 dBm.
The amplifier can operate from –55 °C up to +185 °C.