The document describes the features and characteristics of GD5520Y InGaAs avalanche photodiode produced by China Electronics Technology Group Corp.No.44 Research Institute.
The GD5520Y is an InGaAs avalanche photodetector featuring a planar chip structure that provides low noise, high sensitivity and high reliability. It is designed for 2.5 Gbps testing modules, optical fiber test systems and similar applications.\n\nKey specifications include a spectral response range of 900‑1700 nm, active area diameter of 50 µm, responsivity of 8.5 A/W at 1.55 µm, maximum gain of 20, reverse breakdown voltage of 40‑60 V, dark current below 10 nA, total capacitance 0.5 pF, operating temperature –50 °C to +80 °C, and power dissipation of 50 mW. The device is supplied in a tail‑fiber bullet package with GND, N and P pins. This manual is written in Chinese.
| Operating temperature range | -50 °C to +80 °C |
|---|---|
| Power dissipation | 50 mW |
| Forward current | 5 mA |
The device operates from –50 °C to +80 °C.