This datasheet is for GS88237BB/D-xxxV 256K x 36 9Mb SCD/DCD Sync Burst SRAM. It provides the main features of the product, such as operating voltage, operating temperature, and package type.
GS72108TP/J 256K x 8 2Mb Asynchronous SRAM 8, 10, 12, 15 ns 3.3 V VDD Center VDD and VSS SOJ, TSOP Commercial Temp Industrial Temp, fast access time, CMOS low power operation, single 3.3 V ± 0.3 V power supply, all inputs and outputs are TTL-compatible
The GS8320EV18/32/36T is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter, which can be used in DSP main store, network chip set support and other applications.
The GS88237BB/D is a 9Mb SCD/DCD synchronous burst SRAM with a storage capacity of 256K x 36. It operates at frequencies ranging from 333 MHz to 200 MHz and supports voltage supplies of 2.5 V or 3.3 V. It features single/dual cycle deselect, IEEE 1149.1-compatible boundary scan, selectable high/low output drive mode, linear or interleaved burst mode, automatic power-down, and more.
GSI Technology 4Mb Pipelined and Flow Through Synchronous NBT SRAMs are available in 256K x 18 and 128K x 36 configurations. They feature user configurable Pipeline and Flow Through mode, NBT (No Bus Turn Around) functionality, and fully pin compatibility with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs.
GS840Z18/36AT-180/166/150/100 is a 4Mb Synchronous Static SRAM from GSI Technology that supports No Bus Turn Around for zero wait read-write-read bus utilization.
The GS84018/32/36AT/B-190/180/166/150/100 is a 4Mb synchronous burst SRAM from GSI Technology. It operates at a frequency of 190 MHz–100 MHz, with a core power supply of 3.3 V VDD and I/O power supplies of 3.3 V and 2.5 V. It is available in TQFP and BGA packages.
GS816018/32/36BT-250/200/150 is a high performance synchronous SRAM with a 2-bit burst address counter, developed by GSI Technology for Level 2 Cache applications supporting high performance CPUs. It is now widely used in synchronous SRAM applications, including DSP main store and networking chip set support. The device has a 2.5 V or 3.3 V +10%/–10% core power supply, a 2.5 V or 3.3 V I/O power supply, Byte Write (BW) and/or Global Write (GW) operation, internal self-timed write cycle and automatic power-down function.
