GSI Manuals - Page 2

GSI manuals, page 2

• GSI TECHNOLOGY GS882ZV18/36BB/D-333/300/250/200 9Mb Pipelined Flow Through Synchronous NBT SRAM

  The GS882ZV18/36B is a 9Mb Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available chip selects, thereby achieving zero wait read-write-read bus utilization. The product is powered by 1.8V VDD and 1.8V I/O, features a user-configurable pipeline and flow-through mode, ZQ mode pin, IEEE 1149.1 JTAG-compatible Boundary Scan, on-chip parity encoding and error detection, LBO pin for linear or interleave burst mode, pin-compatibility with 2M, 4M, and 18M devices, byte write operation (9-bit Bytes), 3 chip enable signals for easy depth expansion, ZZ pin for automatic power-down, JEDEC-standard 119-bump BGA and 165-bump FPBGA packages, lead-free 119-bump and 165-bump BGA packages available.

• GSI TECHNOLOGY GS88237BB/D-xxxV handbook

  This datasheet is for GS88237BB/D-xxxV 256K x 36 9Mb SCD/DCD Sync Burst SRAM. It provides the main features of the product, such as operating voltage, operating temperature, and package type.

• GSI GS72108TP/J 256K x 8 2Mb Asynchronous SRAM 8 10 12 15 ns 3.3 V VDD Center VDD VSS

  GS72108TP/J 256K x 8 2Mb Asynchronous SRAM 8, 10, 12, 15 ns 3.3 V VDD Center VDD and VSS SOJ, TSOP Commercial Temp Industrial Temp, fast access time, CMOS low power operation, single 3.3 V ± 0.3 V power supply, all inputs and outputs are TTL-compatible

• GSI TECHNOLOGY GS8320EV18/32/36T-250/225/200/166/150/133 handbook

  The GS8320EV18/32/36T is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter, which can be used in DSP main store, network chip set support and other applications.

• GSI TECHNOLOGY GS88237BB/D-333/300/250/200 256K x 36 9Mb SCD/DCD Sync Burst SRAM

  The GS88237BB/D is a 9Mb SCD/DCD synchronous burst SRAM with a storage capacity of 256K x 36. It operates at frequencies ranging from 333 MHz to 200 MHz and supports voltage supplies of 2.5 V or 3.3 V. It features single/dual cycle deselect, IEEE 1149.1-compatible boundary scan, selectable high/low output drive mode, linear or interleaved burst mode, automatic power-down, and more.

• GSI TECHNOLOGY GS71108TP/J/SJ/U Manual

  This document contains information about the features and characteristics of a certain product, as well as related user guides and specifications.

• GSI TECHNOLOGY GS842Z18/36AB-180/166/150/100 Manual

  GSI Technology 4Mb Pipelined and Flow Through Synchronous NBT SRAMs are available in 256K x 18 and 128K x 36 configurations. They feature user configurable Pipeline and Flow Through mode, NBT (No Bus Turn Around) functionality, and fully pin compatibility with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs.

• GSI TECHNOLOGY GS840Z18/36AT-180/166/150/100 4Mb Pipelined Flow Through Synchronous NBT SRAMs handbook

  GS840Z18/36AT-180/166/150/100 is a 4Mb Synchronous Static SRAM from GSI Technology that supports No Bus Turn Around for zero wait read-write-read bus utilization.

• GSI TECHNOLOGY GS84018/32/36AT/B-190/180/166/150/100 4Mb Sync Burst SRAMs handbook

  The GS84018/32/36AT/B-190/180/166/150/100 is a 4Mb synchronous burst SRAM from GSI Technology. It operates at a frequency of 190 MHz–100 MHz, with a core power supply of 3.3 V VDD and I/O power supplies of 3.3 V and 2.5 V. It is available in TQFP and BGA packages.

• GSI TECHNOLOGY GS816018/32/36BT-250/200/150 handbook

  GS816018/32/36BT-250/200/150 is a high performance synchronous SRAM with a 2-bit burst address counter, developed by GSI Technology for Level 2 Cache applications supporting high performance CPUs. It is now widely used in synchronous SRAM applications, including DSP main store and networking chip set support. The device has a 2.5 V or 3.3 V +10%/–10% core power supply, a 2.5 V or 3.3 V I/O power supply, Byte Write (BW) and/or Global Write (GW) operation, internal self-timed write cycle and automatic power-down function.