This data sheet describes the ICSI IS41C16100S and IS41LV16100S 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices employ an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100S ideal for use in 16-, 32-bit wide data bus systems. These features make the IS41C16100Sand IS41LV16100S ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.