NEC Manuals

NEC NE664M04 handbook

The NE664M04 is a NPN silicon high frequency power transistor from NEC. It features a high gain bandwidth, high output power and high linear gain, making it an excellent choice for the output or driver stage for mobile or fixed wireless applications.

NEC NE663M04 handbook

NEC NE662M16 handbook

NE662M16 is a NPN silicon high frequency transistor from NEC. It features high gain bandwidth (fT=25GHz), low noise figure (NF=1.1dB@2GHz), high maximum stable gain (20dB@f=2GHz) and low profile package (M16) with a height of just 0.50mm.

NEC NE662M04 handbook

NEC NE661M04 handbook(1)

NE661M04 is an NPN silicon RF transistor produced by NEC, which has the characteristics of low noise, high gain and low current.

NEC NE661M04 handbook

NE661M04 is a high frequency NPN silicon transistor with high gain bandwidth, high power gain, low noise figure and high maximum stable gain.

NEC NE651R479A handbook

The NE651R479A is a 0.4W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It offers high linear gain, high efficiency, excellent distortion performance, and can serve as a driver amplifier for NE6510179A and NE6510379A.

NEC NE6510379A handbook

The NE6510379A is a 3W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It has high linear gain, high efficiency, and excellent distortion.

NEC N-CHANNEL GaAs MES FET NE650R279A 0.2 W L S-BAND POWER GaAs MES FET handbook

The NE650R279A is a 0.2W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.

NEC NE6501077 handbook

NE6501077 is a power GaAs field effect transistor that provides high gain, high efficiency, and high output power in the L, S band.

NEC NE6500496 handbook

NEC N-CHANNEL GaAs MES FET NE6500379A 3W L S-BAND POWER GaAs MESFET handbook

The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.