Fairchild Manuals

FQPF2N80 is an 800V N-channel MOSFET with low on-state resistance, low gate charge, low gate-source capacitance, fast switching speed and 100% avalanche tested, which is suitable for high efficiency switch mode power supply.

This document provides information about stock inventory, technical data, encyclopedia information, and hot news from Dinghao. It includes the features and characteristics of QFET products.

The FQPF2NA90 is a 900V N-channel MOSFET manufactured by Fairchild. Its features are low on-state resistance, low gate charge, low Crss, fast switching, 100% avalanche tested and improved dv/dt capability.

FQPF2NA90 is a 900V N-Channel MOSFET power field effect transistor produced using Fairchild's proprietary technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability, making it suitable for high efficiency switch mode power supplies.

FQPF2P25 is a P-channel MOSFET produced by Fairchild with low on-state resistance, fast switching speed, and high energy pulse withstand capability.

This document describes the FQPF2P25 250V P-Channel MOSFET product, which is a P-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary DMOS technology. The product features low on-state resistance, superior switching performance, and high energy pulse withstand capability, making it well suited for high efficiency switching DC/DC converters.

FQPF2P40 is a 400V P-channel MOSFET produced by Fairchild. It features RDS(on) = 6.5Ω @VGS = -10 V, low gate charge (typical 10 nC), low Crss (typical 6.5 pF), fast switching, 100% avalanche tested, and improved dv/dt capability.

This document describes the features and characteristics of FQPF2P40 400V P-Channel MOSFET, including low on-state resistance, low gate charge, and fast switching.

This document describes the features and characteristics of the FQPF30N06 60V N-Channel MOSFET product produced by Fairchild Semiconductor Corporation. This product utilizes Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in avalanche and commutation modes. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

This document describes the features and characteristics of the FQPF30N06 60V N-Channel MOSFET product. It is produced using Fairchild's proprietary DMOS technology, which provides low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications.

This document describes the FQPF30N06L 60V logic N-channel MOSFET produced by Fairchild Semiconductor Corporation. The device is manufactured using advanced DMOS technology, providing low on-state resistance, superior switching performance, and high energy pulse tolerance. It is suitable for low voltage applications such as automotive, DC/DC converters, and portable battery-operated products.

FQPF30N06L is a N-channel MOSFET produced by Fairchild. It has the characteristics of low on-state resistance, low gate charge, low gate capacitance, fast switching, etc. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

This document is the technical documentation of FQP32N12V2/FQPF32N12V2 N-Channel MOSFET, introducing the characteristics and features of this device, including RDS(on), Crss, dv/dt, etc.