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FQPF33N10 is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been specifically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
This document describes the features and characteristics of the FQPF33N10 N-Channel MOSFET transistor, including maximum current and voltage, low charge and capacitance, fast switching speed, and ability to withstand avalanche and commutation modes.
FQPF33N10L is a 100V logic N-channel MOSFET with 18A continuous current and 0.052ohm on-state resistance. It features low gate charge, low Crss, fast switching and 100% avalanche tested.
This document is the datasheet of FQPF33N10L. It introduces the features and characteristics of the product, including rated working voltage, working current, switching speed, switching loss, heat dissipation power, breakdown voltage, breakdown energy, peak diode recovery dv/dt, etc.
This document introduces the inventory, technical data, encyclopedia information, and hot news of Dinghao company. It includes the features and characteristics of QFET products.
This document describes the features of the FQPF34N20L, a 200V logic N-channel MOSFET product produced by Fairchild Semiconductor International. It utilizes advanced DMOS technology to achieve low on-state resistance, superior switching performance, and high energy pulse withstand capability. The product is suitable for applications such as high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
FQPF34N20L is a Fairchild N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.
FQPF3N25 is a N-channel enhancement mode power field effect transistor produced by Fairchild. The device uses Fairchild's proprietary planar stripe DMOS technology, which has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
FQPF3N25 is an N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for high efficiency switching DC/DC converters and switch mode power supplies.
QFET QFET QFET QFET is a self-owned brand of Dinghao, which has rich experience and accumulation in product research and development, production, quality control and sales. It provides high-quality products and services for customers.
Welcome to Dinghao Semiconductor, providing all QFET product information, including inventory, technical data, encyclopedia information, hot news, etc.
This document introduces QFET products of Dinghao Electronics. It mainly introduces the technical information of QFET, including product functions, technical features, application fields, etc.
FQP3N50C/FQPF3N50C 500V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild. It features low gate charge (typical 10 nC), low Crss (typical 8.5 pF), fast switching and 100% avalanche tested. This device is well suited for high efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
This is a 600V N-channel MOSFET from Fairchild with a maximum current of 2.0A. Its RDS(on) is only 3.6Ω, low gate charge, low Crss, fast switching, 100% avalanche tested, and improved dv/dt capability.
