INFINEON Manuals
INFINEON SPP80N06S2L-07 SPB80N06S2L-07 Manual
This document is the characteristic parameter table of SPP80N06S2L-07 and SPB80N06S2L-07, including voltage, current, power, temperature, packaging and other information.
File format: PDF Size:309 KB
INFINEON IPD90R1K2C3 Manual
IPD90R1K2C3 CoolMOS™ Power Transistor features the lowest RON x Qg figure-of-merit, extreme dv/dt rating, high peak current capability and is qualified according to JEDEC1) for target applications. It is Pb-free, lead plated, and RoHS compliant.
File format: PDF Size:298 KB
INFINEON BUZ 31 Manual
This document describes the features and characteristics of SIPMOS® power transistors, including N-channel, enhancement mode, and avalanche-rated.
File format: PDF Size:393 KB
INFINEON IPA60R199CP Manual
ipa60r199cp is a power transistor with ultra-low gate charge, extreme dv/dt rating and high peak current capability.
File format: PDF Size:283 KB
INFINEON SPP04N80C3 SPA04N80C3 Manual
SPP04N80C3 is a high voltage power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance. It is available in PG-TO220 package.
File format: PDF Size:868 KB
INFINEON IPI60R385CP Manual
IPI60R385CP CoolMOSTM Power Transistor Features
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INFINEON - BAV99... Manual
BAV99 is a silicon switching diode produced by Texas Instruments. It has high switching speed, high reverse voltage, low power consumption and other characteristics, and can be applied to high-frequency switching circuits.
File format: PDF Size:759 KB
INFINEON BC846...-BC850... Manual
This document describes the features and characteristics of the BC846.-BC850. series NPN silicon AF transistors, released in 2006. They are suitable for AF input stages and driver applications, with high current gain, low collector-emitter saturation voltage, low noise between 30 Hz and 15 kHz, and complementary types available (BC856.-BC860. PNP).
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INFINEON SPP16N50C3 SPI16N50C3 SPA16N50C3 Manual
This datasheet mainly introduces the features and characteristics of the SPP16N50C3, SPI16N50C3 and SPA16N50C3 products, including rated current, continuous current, pulsed current, avalanche energy, avalanche current, gate source voltage, power dissipation, operating temperature, reverse diode dv/dt and drain source voltage slope.
File format: PDF Size:963 KB
INFINEON BUZ 73 Manual
BUZ 73 is an N-channel enhancement mode avalanche-rated power transistor. It has a maximum rating of 200V, 7A and 0.4 Ohms of on-resistance.
File format: PDF Size:429 KB
INFINEON IPA90R1K2C3 Manual
IPA90R1K2C3 CoolMOS™ Power Transistor Features, the lowest figure-of-merit RON x Qg, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant, Ultra low gate charge. CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS.
File format: PDF Size:336 KB
INFINEON F3 ICE3AS02 ICE3BS02 ICE3AS02G ICE3BS02G Manual
ICE3AS02 / ICE3BS02 ICE3AS02G / ICE3BS02G Off-Line SMPS Current Mode Controller with integrated 500V Startup Cell
File format: PDF Size:491 KB
INFINEON IKW40T120 Manual
The document describes the features and characteristics of IKW40T120 TrenchStop series power semiconductors. The device uses TrenchStop and Fieldstop technology and is equipped with a soft, fast recovery anti-parallel EmCon HE diode. It is designed for applications such as frequency converters and uninterrupted power supply. It offers very tight parameter distribution and high ruggedness with temperature stable behavior. The NPT technology allows for easy parallel switching due to positive temperature coefficient in VCE(sat). The device has low EMI, low gate charge, and a very soft, fast recovery anti-parallel EmCon HE diode. It is qualified according to JEDEC1 standards and is lead-free and RoHS compliant.
File format: PDF Size:878 KB
INFINEON SDP10S30 SDT10S30 Manual
SDP10S30 and SDT10S30 are thinQ! SiC Schottky Diodes, which have revolutionary semiconductor material - Silicon Carbide. Their switching behavior is benchmark, no reverse recovery, no temperature influence on the switching behavior, and no forward recovery.
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INFINEON SPD04N60C3/SPU04N60C3 Manual
This document introduces a product called VDS, which has multiple features and characteristics, including temperature range, voltage, power, etc.
File format: PDF Size:1177 KB
INFINEON BTS 5235-2L Manual
This document is a datasheet for the BTS 5235-2L Smart High-Side Power Switch, providing information about its features and characteristics.
File format: PDF Size:780 KB
INFINEON SPP08N80C3/SPI08N80C3/SPA08N80C3 Manual
This document is the P-TO220-3-31 MOSFET datasheet
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INFINEON SPW24N60CFD Manual
This is a CoolMOSTM power transistor product with inherent fast recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv /dt rating, high peak current capability and other features.
File format: PDF Size:1811 KB
INFINEON IKCS12F60AA Manual
This document describes the features and characteristics of the Power Management & Drives Control integrated Power System (CIPOS™) IKCS12F60AA product from Infineon Technologies.
File format: PDF Size:515 KB