INFINEON Manuals

This document describes the features and characteristics of the IKW75N60T TrenchStop® Series q Power Semiconductors, including the Low Loss DuoPack design, very low VCE(sat), maximum junction temperature of 175°C, short circuit withstand time of 5µs, positive temperature coefficient in VCE(sat), very tight parameter distribution, high ruggedness, temperature stable behavior, very high switching speed, low EMI, and very soft, fast recovery anti-parallel EmCon HE diode.

File format: PDF Size:914 KB

This is a new type of high voltage technology power transistor with extremely low RDS(on), high peak current capability, improved transconductance, and P-TO-220-3-31 fully isolated package (2500VAC; 1 minute).

File format: PDF Size:339 KB

BSO350N03 OptiMOS®2 Power-Transistor is a fast switching MOSFET for SMPS, optimized for notebook DC/DC, with dual n-channel, logic level, excellent gate charge x R DS(on) product (FOM), very low on-resistance R DS(on), avalanche rated, dv/dt rated, lead-free lead plating, RoHS compliant.

File format: PDF Size:265 KB

IPI60R520CP CoolMOSTM Power Transistor is a power transistor from Infineon. This product has the lowest power loss, ultra-low gate charge, extreme dv/dt rating, high peak current capability and high reliability, etc. It is suitable for hard switching SMPS topologies.

File format: PDF Size:271 KB

BSS139 is a N-channel MOSFET device produced by STMicroelectronics. Its maximum rated voltage is 250V, maximum continuous current is 0.1A, maximum pulsed current is 0.4A, minimum gate threshold voltage is -1.4V, and maximum drain-source on-resistance is 30Ω.

File format: PDF Size:242 KB

This document describes the features and characteristics of the SPP20N65C3, SPA20N65C3, and SPI20N65C3 Cool MOS™ power transistors, including worldwide best RDS(on), ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability, and improved transconductance.

File format: PDF Size:287 KB

The SPW35N60C3 CoolMOSTM power transistor features new revolutionary high voltage technology, ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra-low effective capacitances, and improved transconductance.

File format: PDF Size:720 KB

This document describes the features and characteristics of the IPI60R600CP CoolMOSTM power transistor, including the lowest R ON x Qg value, ultra-low gate charge, extreme dv/dt rating, high peak current capability, and more.

File format: PDF Size:270 KB

File format: PDF Size:0 KB

This document describes the features and characteristics of the IPB60R125CP CoolMOSTM power transistor, including the lowest figure-of-merit RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, etc. The product is specially designed for hard switching topologies in the server and telecom industries.

File format: PDF Size:336 KB

This document describes the features and characteristics of two Cool MOS™ power transistors, SPP17N80C3 and SPA17N80C3, including new high voltage technology, worldwide best RDS(on) in TO 220, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, improved transconductance, etc.

File format: PDF Size:613 KB

BTS409L1 is a high side power switch produced by Infineon Technologies AG. It has overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection, fast demagnetization and other features. It is applied to 12 V and 24 V DC grounded loads and can replace mechanical relays, fuses and discrete circuits.

File format: PDF Size:305 KB

The BTS650P is a high-side high current power switch with the following features: overload protection, current limiting, short circuit protection, overtemperature protection, overvoltage protection (including load dump), output negative voltage clamp, fast deenergizing of inductive loads, low ohmic inverse current operation, Reversave (Reverse battery protection), diagnostic feedback with load current sense, open load detection via current sense, loss of Vbb protection, electrostatic discharge protection.

File format: PDF Size:237 KB

BAR50 series is a silicon PIN diode produced by Texas Instruments. It has low capacitance, low forward resistance and low harmonics, which is suitable for RF switch and attenuating applications.

File format: PDF Size:472 KB

This document describes the features and characteristics of the SMBT2222A/MMBT2222A NPN silicon switching transistor released in 2006, including high DC current gain and low collector-emitter saturation voltage.

File format: PDF Size:173 KB

IPA60R125CP CoolMOS is the world’s smallest N-channel MOSFET with a RDS(on) of 0.125 Ω. It features ultra-low gate charge, extreme dv/dt rating, high peak current capability and is qualified according to JEDEC for target applications and is Pb-free lead plating and RoHS compliant.

File format: PDF Size:282 KB

SPP08N80C3, SPI08N80C3 SPA08N80C3 is a 800 V low on-resistance, high current power transistor, using new revolutionary high voltage technology, features ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra-low effective capacitances and improved transconductance.

File format: PDF Size:1470 KB

This document is about the specifications of a certain product, including the rated input voltage, rated output voltage, maximum output current, operating temperature range, maximum conversion efficiency, etc.

File format: PDF Size:1775 KB

This document is a product description document for BTS 5235-2G Smart High-Side Power Switch. It introduces the features and characteristics of the product, including package, pin definition, electrical characteristics, circuit principle, etc.

File format: PDF Size:778 KB

SPP11N60C3 SPI11N60C3, SPA11N60C3 is a new high voltage technology power transistor with ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability and improved transconductance.

File format: PDF Size:1370 KB