INFINEON Manuals

BTS 441 T is a smart highside power switch with a one-channel 20mΩ on-state resistance. It is a µC compatible power switch for 5V, 12V and 24V DC applications. It can be used for all types of resistive, inductive and capacitive loads. The product also features short circuit protection, current limitation, overload protection, thermal shutdown, overvoltage protection (including load dump), reverse battery protection and loss of ground and loss of Vbb protection.

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The document describes the features and characteristics of the 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM with model numbers HYS64D32020[H/G]DL–5–C and HYS64D[32020/16000][H/G]DL–6–C.

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This document is about HYB39S256400D[C/T](L) HYB39S256800D[C/T](L) HYB39S256160D[C/T](L) 256-MBit Synchronous DRAM SDRAM products' datasheet.

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The XC164CM is a high-performance 16-bit microcontroller from Infineon's XC166 family, with a powerful integrated peripheral set and high performance and reliable on-chip Flash memory. It is more than just a 16-bit microcontroller, and its huge flexibility combined with a small package makes it suitable for any industrial and automotive applications that require little board space and low cost.

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The Infineon V23870-A211x-xx00 is a bidirectional transceiver supporting 155 Mb/s data rate. It features a multi-quantum well structure FP laser diode with a wavelength of 1310 nm.

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TLE 4296 GV30, GV33, GV50 is a monolithic integrated low drop voltage regulator with three versions of 3.0 V, 3.3 V, 5.0 V, output voltage tolerance ≤ ±4%, output current 30 mA, inhibit input, low quiescent current consumption, wide operating range up to 45 V, wide temperature range -40 °C ≤ Tj ≤ 150 °C, output protected against short circuit, overtemperature protection, reverse polarity proof.

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This document provides specifications for the wireless components KTS6027-2 and KTS6029-2 version 2.0. It includes detailed information on the TV tuner mixer-oscillator-PLL with unbalanced IF-amplifier.

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This is a bi-directional small form factor transceiver designed for full-duplex communication over a single fiber. The single fiber concept saves overall system costs by eliminating one fiber, allowing for doubling of capacity without installing new fibers, and simplifying fiber management.

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This datasheet provides SPI80N06S2-07,SPP80N06S2-07,SPB80N06S2-07 OptiMOS Power-Transistor product characteristics, including model, package, maximum current, maximum power consumption, maximum operating temperature, etc.

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The SPD30N06S2-15 is a N-channel enhancement mode power transistor with a maximum continuous current of 30A, a maximum drain-source breakdown voltage of 55V, a maximum on-resistance of 14.7mΩ, and a working temperature range of -55℃ to 175℃. It has anti-avalanche and dv/dt protection functions.

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BAS40./BAS140W Silicon Schottky Diode is a high-performance switching diode, mainly used for high-frequency switching, circuit protection, voltage clamping and other fields.

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TLE 4905/35/35-2/45-2 are unipolar/bipolar magnetic field switches designed specifically for automotive and industrial applications. They feature temperature compensated magnetic performance, digital output signal, compatibility with unipolar and alternating magnetic fields, wide temperature range, reverse polarity protection, and output protection against electrical disturbances.

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This is a datasheet for the XC167CI-16F 16-bit single-chip microcontroller with C166SV2 core, produced by Infineon Technologies AG. It provides information about the features and characteristics of the product.

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This document describes the HYS72T32000GR, HYS72T64001GR, and HYS72T64020GR low profile registered DIMM modules based on DDR2 technology. The modules have capacities of 256MB and 512MB and are designed for 240-pin connector sockets.

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This document is about Infineon's Memory Spectrum product information, introducing various types of memory products, including DDR and DDR2 components and DIMM, CellularRAM, Mobile-RAM, Green DRAM, TwinNAND, SD Cards/MultiMediaCards, etc.

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SDT08S60 thinQ!® SiC Schottky diode is the world's first 600V Schottky diode, using revolutionary semiconductor material - Silicon Carbide, with benchmark switching behavior, no reverse recovery, no temperature influence on the switching behavior, no forward recovery.

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The SPP07N60C3, SPI07N60C3, and SPA07N60C3 are Cool MOS™ power transistors with 650 V VDS@Tjmax, 0.6 Ω RDS(on), and 7.3 A ID.

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The IPI90R340C3 CoolMOS™ power transistor features the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability, qualification according to JEDEC1) for target applications, Pb-free lead plating compliant with RoHS, and worldwide best RDS,on in TO262 (I2Pak) package. It is designed for quasi resonant flyback/forward topologies, PC Silverbox and consumer applications, and industrial SMPS. The maximum ratings include continuous drain current, pulsed drain current, avalanche energy for single pulse and repetitive, avalanche current for repetitive, MOSFET dv/dt ruggedness, gate source voltage, power dissipation, and operating and storage temperature.

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BC856W, BC857W, BC858W, BC859W and BC860W are PNP Silicon AF transistors. They are for AF input stages and driver applications. They feature high current gain, low collector-emitter saturation voltage and low noise between 30Hz and 15kHz. These PNP transistors are complementary types to BC846W, BC847W, BC848W, BC849W and BC850W (NPN).

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