INFINEON Manuals

IDT06S60C is a 2A 600V SiC Schottky diode from IDT. Its features are revolutionary semiconductor material - Silicon Carbide, switching behavior benchmark, no reverse recovery/ no forward recovery, no temperature influence on the switching behavior, high surge current capability, Pb-free lead plating; RoHS compliant, qualified according to JEDEC1) for target applications, breakdown voltage tested at 5mA2). This diode is specially designed for fast switching applications like CCM PFC and Motor Drives.

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This document describes the features of the SPW17N80C3 Cool MOS™ power transistor, including new high voltage technology, worldwide best RDS(on) in TO 247 package, ultra low gate charge, periodic avalanche rating, and extreme dv/dt rating.

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IPI60R299CP CoolMOSTM Power Transistor features the lowest RONxQg, ultra low gate charge, extreme dv/dt rating and high peak current capability.

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BC846, BC850 are NPN Silicon AF transistors, mainly used for AF input stages and driver applications. They feature high current gain, low collector-emitter saturation voltage, and low noise between 30Hz and 15kHz.

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This datasheet provides parameter information for SPP12N50C3, SPI12N50C3, SPA12N50C3, including maximum voltage, current, power consumption, temperature, etc.

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This document describes the features and characteristics of a product, including temperature control, voltage requirements, wave soldering, etc.

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IPP50R140CP CoolMOSTM Power Transistor

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PROFET® ITS 716G is a Smart High-Side Power Switch For Industrial Applications product from Infineon, featuring four 40V/140mΩ status feedback channels, and is used in industrial applications with a load voltage of 12V/24V.

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BAS40./BAS140W is a silicon Schottky diode produced by ON Semiconductor. It is mainly used for high-voltage fast switching, circuit protection, voltage clamping, high-level detection and mixing.

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This datasheet provides detailed information on the BUZ 73 AL SIPMOS ® power transistor. The transistor features an N channel, enhancement mode, avalanche rated and logic level functionality. It has a maximum channel-source breakdown voltage of 200V, a continuous drain current of 5.5A and a 0.6Ω drain-source on-resistance.

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This document is the datasheet of SPP24N60CFD CoolMOSTM power transistor. It details the characteristics and parameters of the product, including maximum current, maximum voltage, maximum power consumption, and maximum temperature.

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BSP 373 is a high voltage, high speed, low on-resistance, N-channel power MOSFET. It has a very low gate threshold voltage (VGS(th) = 2.1V to 4.0V) and a high breakdown voltage (V(BR)DSS = 100V). The BSP 373 is suitable for a wide range of applications, including automotive, industrial, and consumer electronics.

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BAV199 is a low-leakage diode with a maximum reverse voltage of 85V and medium switching speeds. It can be used for low-leakage applications.

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BAR64 series are high voltage current controlled RF resistors suitable for RF attenuators and switches. This series has very low reverse bias capacitance, frequency range of 1MHz to 6GHz, very suitable for RF applications

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BSS87 is an N-channel enhanced logic level MOSFET with a maximum voltage of 240V, RDS(on) of 6 ohms, a continuous current of 0.26A, and a dv/dt of 6kV/µs.

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This document introduces the SPU03N60S5 and SPD03N60S5 Cool MOS™ power transistors of Rev. 2.4 released on October 5, 2005. These transistors feature new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.

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IPB50R199CP CoolMOSTM Power Transistor is a power transistor with the lowest RON x Qg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating and RoHS compliance.

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The IPA50R350CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, Pb-free lead plating, RoHS compliance. It is qualified according to JEDEC standards. It is designed for hard and soft switching SMPS topologies, CCM PFC for notebook adapters, PDP and LCD TVs, and PWM for notebook adapters, PDP and LCD TVs.

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This document describes the features and characteristics of SMBT2907A/MMBT2907A PNP silicon switching transistors, released on March 20, 2006. These features include high DC current gain, low collector-emitter saturation voltage, etc. The document also provides detailed information on maximum ratings, thermal resistance, and electrical characteristics.

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SPW20N60CFD is a new type of high voltage power transistor with ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode and extreme low reverse recovery charge.

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