Semelab Manuals - Page 2

Semelab manuals, page 2

• SEME LAB BFT60 handbook

  BFT60 is a NPN transistor produced by Semelab. Its maximum working voltage is 35V, maximum current is 1A, and package type is TO39.

• SEME LAB BFT59 handbook

  BFT59 is an NPN Bipolar device produced by Semelab. It has a maximum working voltage of 300V and a maximum current of 0.2A. The device is packaged in a TO18 package.

• SEME LAB BFT53 handbook

  BFT53 is a NPN type transistor produced by Semelab. Its maximum working voltage is 35V and the maximum current is 1A. The package form is TO18 (TO206AA).

• SEME LAB BFT36A handbook

  BFT36A is a PNP silicon transistor produced by Semelab. It features fast switching and high pulse power. It is suitable for power switching circuits and motor control applications.

• SEME LAB BFT34 handbook

  BFT34 is a NPN type bipolar transistor produced by Semelab. Its maximum working voltage is 100V and its maximum current is 5A. The product uses a TO39 metal package and has high reliability and stability.

• SEME LAB BFT32 handbook

  BFT32 is a bipolar NPN device produced by Semelab with a maximum working voltage of 60V and a maximum current of 5A.

• SEME LAB BFT57DCSM handbook

  BFT57DCSM is a dual bipolar NPN diode produced by Semelab. Its maximum working voltage is 160V and its maximum current is 0.2A. This diode uses the LCC2 ceramic surface mount package, and is suitable for high reliability applications.

• SEME LAB CV7440 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

  CV7440 is a bipolar NPN device with a maximum working voltage of 50V and a maximum working current of 40A. This product is a hermetically sealed device in a TO39 metal package, manufactured by Semelab. It complies with the requirements of BS, CECC, JAN, JANTX, JANTXV, and JANS specifications.

• SEME LAB 1N5221B-LCC3 TO 1N5281B-LCC3 MECHANICAL DATA

  The 1N5221B-LCC3 TOB-LCC 1N5281B-LCC3 is a Zener Voltage Regulator Diode in Hermetic Ceramic Surface Mount Package for High Reliability Applications, produced by Semelab plc.

• SEME LAB D2010UK DATA SHEET

  This document describes the features and characteristics of the D2010UK power dissipation, drain-source breakdown voltage, gate-source breakdown voltage, drain current, storage temperature, and maximum operating junction temperature produced by Semelab plc. The product is a gold metallized multi-purpose silicon DMOS RF FET with a power dissipation of 83W, a drain-source breakdown voltage of 65V, a gate-source breakdown voltage of ±20V, a drain current of 8A, a storage temperature range of -65 to 150°C, and a maximum operating junction temperature of 200°C. It is suitable for VHF/UHF communications from 50 MHz to 1 GHz, with features such as simplified amplifier design, suitable for broad band applications, low Crss, simple bias circuits, low noise, and high gain.

• SEME LAB 2N2218

  The 2N2218 is a bipolar NPN transistor manufactured by Semelab. Its maximum working voltage is 30V and its maximum collector current is 0.8A.

• SEME LAB BFT33A NPN SILICON TRANSISTOR MECHANICAL DATA

  BFT33A is an NPN silicon transistor produced by Semelab company, which has the characteristics of fast switching and high pulse power. It is suitable for power switching circuits and motor control circuits

• SEME LAB BUL56A handbook

  BUL56A is a NPN silicon power transistor produced by SEME Semelab plc. It has the characteristics of high voltage, high speed and high energy, and is suitable for electronic ballast applications.

• SEME LAB IP1R17A/IP3R17A/IP1R17A/IP3R17A handbook

  This document describes the features and characteristics of Semelab's IP1R17A and IP3R17A fixed negative voltage regulators, including line regulation, load regulation, output accuracy, etc.

• SEME D1019UK Data Sheet

  D1019UK is a 50W, 28V, 175MHz single-ended metallized multi-purpose silicon DMOS RF FET manufactured by Semelab.