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FQPF3N80 is a 800V N-Channel MOSFET. It is manufactured using Fairchild’s proprietary, planar stripe, DMOS technology and features low on-state resistance, superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQP3N80C/FQPF3N80C is a 800V N-Channel MOSFET power field effect transistor produced using Fairchild's proprietary DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability, making it suitable for high efficiency switch mode power supplies.
FQP3N80C/FQPF3N80C is a Fairchild produced N-channel enhancement mode power field effect transistor using DMOS technology, with low on-state resistance, superior switching performance and high energy pulse withstand capability, suitable for high efficiency switch mode power supplies.
FQPF3N90 N-Channel MOSFET is a power field effect transistor produced by Fairchild company. Its features are low on-state resistance, superior switching performance, high energy pulse, high efficiency switch mode power supply.
FQPF3N90 is a 900V N-Channel MOSFET produced by Fairchild Semiconductor International. It features low on-state resistance, superior switching performance and high energy pulse endurance, making it ideal for high-efficiency switch-mode power supplies.
The FQPF3P20 is a P-channel MOSFET device from Fairchild Semiconductor. It has a maximum voltage of -200V and a maximum current of -2.2A. It has excellent switching characteristics and a gate charge of 6.0nC. Its RDS(ON) is 2.06Ω.
This datasheet is about FQPF3P20 P-channel QFET datasheet, includes features and characteristics of this product, such as absolute maximum ratings, thermal resistance, electrical characteristics etc.
FQPF3P50 is a 500V P-channel MOSFET produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, high switching performance, and high energy pulse withstand capabilities.
FQPF3P50 is a P-channel enhancement mode power field effect transistor manufactured by Fairchild using their proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
FQPF44N08 N-Channel MOSFET is a power field effect transistor produced by Fairchild. It has low on-state resistance, superior switching performance, high energy pulse bearing capacity, and is suitable for low voltage applications such as automotive, high efficiency switching for DC/DC converters and DC motor control.
This document describes the features and characteristics of the FQPF45N03L 30V LOGIC N-Channel MOSFET, including low resistance, fast switching, and high energy pulse withstand capability.
FQP45N15V2/FQPF45N15V2 is a 150V N-channel enhancement mode power field effect transistor produced by Fairchild. This device has low on-state resistance, fast switching speed and high breakdown voltage, and is suitable for DC/DC converters, synchronous rectifiers and other applications where low Rds(on) is required.
FQP45N15V2/FQPF45N15V2 is a 150V N-channel MOSFET produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology and has low on-state resistance, superior switching performance and high energy pulse tolerance. It is suitable for DC to DC converters, synchronous rectification and other applications where the lowest Rds(on) is required.
