TOREX Manuals

XC74WL74AASR is a d-type flip flop manufactured using silicon gate CMOS processes. The small supply current, which is one of the features of the CMOS logic, gives way to high speed operations which enables LS-TTL. With wave forming buffers connected internally, stabilized output can be achieved as the series offers high noise immunity. As the series is integrated into a mini molded, MSOP-8B package, high density mounting is possible.

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The XC74UL00AA is a 2-input CMOS NAND Gate, manufactured using silicon gate CMOS fabrication. CMOS low power circuit operation makes high speed LS-TTL operation achievable. With a wave forming buffer connected internally, stabilized output can be achieved as the circuit offers high noise immunity. As the XC74UL00AA is integrated into mini molded, SSOT-25 and SON-6 package, high density mounting is possible.

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XC74UL14AA is a CMOS schmitt trigger inverter, manufactured using silicon gate CMOS fabrication. CMOS low power circuit operation makes high speed LS-TTL operation achievable. With a wave forming buffer connected internally, stabilized output can be achieved as the circuit offers high noise immunity. As the XC74UL14AA is integrated into mini molded, SSOT-25 and SON-6 package, high density mounting is possible.

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XC74UL4066 is a CMOS analog switch manufactured using silicon gate CMOS processes. It features small supply current, allowing for high-speed analog or digital signal switching. It is integrated into a mini molded, SSOT-25 and SON-6 package, enabling high-density mounting.

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XC74UL04AA is a CMOS inverter with high speed and low power consumption, ideal for palmtop computers and other digital devices

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XC74UL02AA is a 2-input CMOS NOR gate manufactured using silicon gate CMOS fabrication. The low power CMOS circuit operation makes high speed LS-TTL operation achievable. With a wave forming buffer connected internally, stabilized output can be achieved as the circuit offers high noise immunity. As the XC74UL02AA is integrated into mini molded, SSOT-25 and SON-6 package, high density mounting is possible.

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XC2408A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), and low power consumption using CMOS process. The product is designed for GPS band frequency (1.6GHz). The IC's internal circuit can be placed in stand-by mode via the CE function, reducing the consumption current significantly. The external RBIAS can adjust the power supply voltage, with standard voltages of 3.45V, 3.00V, 2.85V, and 1.80V.

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XC2407A816UR-G is a CMOS process ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power consumption. The XC2407 is designed for GPS band frequency (1.6GHz). The IC's internal circuit can be placed in stand-by mode via the CE function. In the stand-by mode, consumption current is greatly reduced and there is no need to add external ON/OFF control function like LDO. External RBIAS can adjust power supply to any voltage of 1.71V~3.63V as self bias function. Standard power supply voltages are 3.45V, 3.00V, 2.85V and 1.80V.

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XC2406A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power consumption using CMOS process. The XC2406 is designed for GPS band frequency (1.6GHz). The IC's internal circuit can be placed in stand-by mode via the CE function. In the stand-by mode, consumption current is greatly reduced and there is no need to add external ON/OFF control function like LDO. External RBIAS can adjust power supply to any voltage of 1.71V~3.63V as self bias function. Standard power supply voltages are 3.45V, 3.00V, 2.85V and 1.80V.

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XC2404A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure, low power consumption. The device offers easy output matching to 50Ω for input and output with less external components. The device operates at 1.2V. For higher power supplies such as 1.8V and 2.85V, the device can operate with a self bias of one adding resister.

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The XC2401A8167R-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power consumption using CMOS process. The device offers easy output matching to 50Ω for input and output with less external components. An internal self bias function eliminates external bias setting.

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The XC221A series is an input / output rail to rail CMOS Op Amp. With rail to rail functions, operation is guaranteed from power supplies as low as 1.2V. Moreover, since the XC221A series comes in an ultra small SOT-25 package, the series is particularly suited for use with various types of portable phones. Bandwidths of 550kHz and slew rates of 0.5V can be achieved even with power consumption as low as 100μA. Even with large capacitance levels of CL = 200pF (unity gain connection), the XC221A series will not be susceptible to oscillation.

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XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

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XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. This product is equipped with a static protection diode and can be mounted in high density.

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The XP152A11E5MR-G is a P-channel Power MOSFET from Fujitsu Microelectronics with low on-state resistance and ultra high-speed switching characteristics. It can achieve high-speed switching, thereby efficiently setting the IC and saving energy. The built-in gate protect diode is used to prevent static interference. The small SOT-23 package makes high density mounting possible.

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XP162A12A6PR-G is a P-channel Power MOSFET from Infineon with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

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The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

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The XP161A1265PR-G is an N-channel power MOSFET from Infineon Technologies, with low on-state resistance and ultra high-speed switching characteristics. The product has low on-state resistance, ultra high-speed switching, built-in static protection diode, and small SOT-89 package for high density mounting.

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