ST STGD7NB60S handbook

Update: 30 September, 2023

STGD7NB60S is a high voltage insulated gate bipolar transistor launched by STMicroelectronics. It has the characteristics of high input impedance, low on-voltage drop, high current capacity, etc. The device uses DPAK packaging and is suitable for low frequency applications.


File format: PDF

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MD5 Checksum: 1513B05227663859F561BA83D57CC098

Publication date: 08 August, 2012

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PDF Link: ST STGD7NB60S handbook PDF

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