Update: 30 September, 2023
HGTP3N60C3D and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
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MD5 Checksum: BF2C5BCB497F80EDCFD524A923A0E12C
Publication date: 11 June, 2012
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PDF Link: intersil HGTP3N60C3D HGT1S3N60C3DS Data Sheet PDF