Update: 29 September, 2023
The document describes the features of the 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O, which combines state-of-the-art Intel Flash technology with low power SRAM. It offers a multi-partition, dual-operation flash architecture that allows reading from one partition while programming or erasing in another partition. This Read-While-Write or Read-While-Erase capability enables higher data throughput rates compared to single partition devices and allows interleaving code execution. The memory also includes Enhanced Factory Programming (EFP) mode to improve programming performance and eliminate manufacturing bottlenecks. It also features block lock-down and programmable WAIT signal.
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MD5 Checksum: 65C386C0BA9CD17A259C221E0CDFECD3
Publication date: 08 June, 2012
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