HITACHI Manuals

2SK1161, 2SK1162 are N-channel MOSFETs with low on-resistance, high switching speed, low drive current, and no secondary breakdown. They are suitable for switching regulator and DC-DC converter.

2SK1163, 2SK1164 is a high voltage and high current N-channel MOSFET device produced by Toshiba. It is suitable for switching power supplies and DC-DC converters.

2SK1165, 2SK1166 are high voltage, large current N-channel MOSFETs from Toshiba. They are suitable for switching regulators and DC-DC converters. They feature low on-resistance, high switching speed, low drive current and no secondary breakdown.

This document describes the application of 2SK1167 and 2SK1168 Silicon N-Channel MOS FETs, highlighting their features such as low on-resistance, high speed switching, low drive current, and no secondary breakdown. They are suitable for switching regulators and DC-DC converters.

2SK1169, 2SK1170 are two high-voltage power switching N-channel MOSFETs with low on-resistance, high switching speed, low drive current, no secondary breakdown, etc., suitable for switching regulators and DC-DC converters.

2SK1254(L) and 2SK1254(S) are N-channel MOSFETs suitable for high-speed power switching applications. Their features include low on-resistance, high switching speed, and 4V gate drive capability (can be driven from a 5V source). They are suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.

2SK1296 is a high-speed power switch with low on-resistance, high switching speed and low drive current. It can be driven from a 5V source and is suitable for motor drive, DC-DC converter, power switch and solenoid drive.

2SK1298 is a low on-resistance, high speed switching, low drive current silicon N-channel MOSFET, suitable for motor drive, DC-DC converter, power switch and solenoid drive.

This document describes the applications of 2SA1025, 2SA1081, and 2SA1082 silicon PNP epitaxial transistors, including low frequency amplifiers and complementary pairing with 2SC2396, 2SC2543, and 2SC2544.

2SA1025, 2SA1081, 2SA1082 are three silicon PNP type transistors, used in low frequency amplifiers, can be used with 2SC2396, 2SC2543 and 2SC2544.

2SA1029 and 2SA1030 are silicon PNP epitaxial transistors suitable for low frequency amplifiers. They are complementary pairs with 2SC458 and 2SC2308. The features and characteristics include: collector to base voltage ranging from -30V to -55V, collector to emitter voltage ranging from -30V to -50V, emitter to base voltage of -5V, collector current of -100mA, emitter current of 100mA, collector power dissipation of 300mW, and maximum operating temperature of 150°C.

This document describes the features and characteristics of 2SA1031 and 2SA1032, including their application as low frequency low noise amplifiers, complementary pairing with 2SC458 (LG) and 2SC2310, etc.

2SA1031, 2SA1032 are Silicon PNP Epitaxial, applied to low frequency low noise amplifier, is the complementary pair of 2SC458 (LG) and 2SC2310

2SA1052 is a silicon PNP type transistor with low frequency amplifier application