HITACHI Manuals

HA178M00 series 3-terminal fixed voltage regulators have the following features: output current less than 500 mA, various output voltages (5, 6, 7, 8, 9, 12, 15, 18, 20 and 24 V), no external compensation circuit required, built-in current control circuit to protect elements from short circuit damage, built-in chip junction temperature limiting circuit to protect elements from thermal damage, built-in internal power dissipation limiting circuit to protect transistors in output stage.

The Hitachi HM628128A is a 131,072-word×8-bit high performance static RAM. It is manufactured with 0.8µm Hi-CMOS process technology and features high speed and low power consumption. The HM628128A is packaged in a 525-mil SOP, 600-mil plastic DIP, or 8×20mm TSOP, suitable for high density mounting.

This document introduces the features and characteristics of 2SC4877, including applications, absolute maximum ratings, and electrical characteristics.

2SK1070 is a silicon N-channel junction FET suitable for low frequency/high frequency amplifier applications.

The 2SK1093 is a high-performance N-channel MOSFET switch made by Fujitsu, Japan. It has low on-resistance, high switching speed, low drive current and other features. It is suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.

2SK1094 is a silicon N-channel MOSFET that is suitable for applications such as motor drive, DC-DC converter, power switch and solenoid drive. It features low on-resistance, high switching speed, low drive current and can be driven from a 5V source.

This document describes the features and characteristics of a high-speed power switching product, including low on-resistance, high-speed switching, and low drive current. The product can be used in motor drives, DC-DC converters, power switches, and solenoid drives.

2SK1151(L)(S), 2SK1152(L)(S) are N-channel MOSFETs that are suitable for high-speed power switching. Features include low on-resistance, high switching speed, low drive current, no secondary breakdown, and are suitable for switching regulators and DC-DC converters.

2SK1153, 2SK1154 are silicon N-channel MOS FETs suitable for high-speed power switching applications. They feature low on-resistance, high-speed switching, low drive current, and no secondary breakdown. They are suitable for switching regulators and DC-DC converters.

The HD66750/1 is a 128 x 128 dot graphics LCD controller and driver LSI that displays four monochrome grayscales.

2SK1155, 2SK1156 are bipolar MOSFETs with low on-resistance, high switching speed, low drive current, suitable for switching regulator and DC-DC converter.

2SK1159, 2SK1160 is a high voltage switching tube produced by Mitsubishi Electric. It has the characteristics of low on-resistance, high switching speed, low drive current and no secondary breakdown. It is suitable for switching regulators, DC-DC converters and motor drivers.