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APT1002RCN 1000V 5.5A 2.00Ω is a high voltage power MOSFET device produced by Advanced Power Technology. It has a maximum drain-source voltage of 1000V, a maximum continuous drain current of 5.5A, and a maximum drain-source on-state resistance of 2.00Ω.

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This document provides detailed specifications of APT1002RBN and APT1002R4BN, including maximum voltage, current, power, temperature range, etc.

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This datasheet is about the static electrical characteristics of APT10026RKVR.

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This is the technical information of APT10026L2LL, including its maximum ratings and static electrical characteristics.

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This document describes a power device with high voltage, high current, low resistance, and its static electrical characteristics and maximum ratings.

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Query APT10026JNR suppliers

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This document describes the features and parameters of N-Channel Enhancement Mode High Voltage Power MOSFETs. The product model is APT10026JN and the brand is Power MOS IV®. This MOSFET has a drain-source voltage of 1000V, a continuous drain current of 33A, and a drain-source resistance of 0.26Ω.

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The document describes the features and characteristics of a product with model number APT10026JLL, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.

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This document provides information about APT10026JFLL, including rated voltage, rated current, leakage current, switching speed, etc.

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This is the datasheet of APT10025PVR, a high voltage N-channel enhancement mode power MOSFET. The product features low JFET effect, high junction temperature, small package and low on-resistance.

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The document describes the features and characteristics of a product named APT10025JVR, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc. The product has a drain-source voltage of 1000V and a drain current of 34A.

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This data table is for the static electrical characteristics of APT10025JVFR

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The document describes a power MOSFET product with high voltage, high current, and low resistance characteristics. It has a breakdown voltage of up to 1000V between drain and source, a maximum on-state drain current of 34A, and an on-state drain-source resistance of 0.25Ω. The product also has low zero gate voltage and drain current, as well as a high gate-source threshold voltage.

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This file is about the technical information of APT10021JLL, including its maximum ratings and static electrical characteristics

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The document describes a product with the following features and characteristics: 1. Drain-source breakdown voltage; 2. On-state drain current; 3. Drain-source on-state resistance; 4. Zero gate voltage drain current; 5. Gate-source leakage current; 6. Gate threshold voltage.

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This is a datasheet for the APT1001RSVR Schottky diode. The maximum voltage for this diode is 1000V, the maximum current is 11A, and the maximum resistance is 1.000Ω.

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APT1001RBVR is a high voltage N-channel enhancement mode power MOSFET from Power MOS V® series. It features low voltage drop and small package.

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This datasheet is for the APT1001RBN. It contains information on the voltage, current, and other parameters of the product, as well as maximum operating temperature.

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The document describes the features and characteristics of a N-channel enhancement mode power MOSFET product, including its voltage, current, resistance, temperature characteristics, and thermal characteristics.

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Search for APT1001R1SN suppliers

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