ADVANCED Manuals

APT10086BVFR is a high voltage N-channel enhancement mode power MOSFET produced by ON Semiconductor. It has low voltage drop, fast recovery body diode, 100% avalanche testing and other features.

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This document is the datasheet of APT10086, which introduces the static electrical characteristics, maximum ratings, repetitive non-repetitive surge current, repetitive surge energy and single pulse surge energy of the product.

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This document describes the features and characteristics of G D S products, including drain-source breakdown voltage, drain-source on-state resistance, and zero gate voltage drain current.

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APT10050JVFR is a Schottky diode from ISOTOP® company, rated at 1000V, maximum current 19A, maximum power 0.500 W, and package type SOT-227.

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APT10050JVR is a power device manufactured by ISOTOP company. Its rated voltage is 1000V, continuous current is 19A, and on-state resistance is 0.500 ohms.

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APT10050JN is a power MOSFET from ISOTOP company. Its features are a maximum voltage of 1000V, a maximum current of 50A, and a maximum power of 500W.

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The document describes the characteristics and test conditions of a specific product, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, gate-source leakage current, and gate threshold voltage.

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APT10050B2VR is a power transistor produced by Texas Instruments. It has a rated voltage of 1000V, a rated current of 21A, a drain-source resistance of 0.500Ω, a rated power of 21W, and a temperature range of -55°C to 150°C.

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APT10050B2VFR and APT10050LVFR are new power MOSFET devices from APT company. The maximum voltage is 1000V, the maximum current is 21A, and the typical resistance is 0.500 ohm.

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This document describes the maximum ratings, technical characteristics, and static electrical characteristics of the APT10050 model.

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This is a technical datasheet for APT10040B2VFR, including maximum ratings, static electrical characteristics, etc.

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APT1004RCN is a high voltage power MOSFET with a maximum voltage of 1000V and a maximum current of 3.6A.

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The document describes a product with the following characteristics: 1. Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA); 2. Drain-Source On-State Resistance (VGS = 10V, 2A); 3. Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V); 4. Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C); 5. Gate-Source Leakage Current (VGS = ±30V, VDS = 0V); 6. Gate Threshold Voltage (VDS = VGS, ID = 1mA).

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The document describes the features and characteristics of a product, including drain-source breakdown voltage, drain-source on-state resistance, zero gate voltage drain current, gate-source leakage current, and gate threshold voltage.

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This document describes the features and characteristics of a product with model number APT10035JLL, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.

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This datasheet lists the characteristics of APT10035JFLL.

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This document is about APT10035 product information, including characteristics, maximum ratings, static characteristics, etc.

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This document provides information on the maximum ratings and technical specifications of the product, including voltage, current, power, etc. It also includes static electrical characteristics of the product, such as leakage current, gate-source voltage, and drain-source current.

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This is a datasheet for APT10030L2VFR

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