ZETEX Manuals

This document describes the specifications and characteristics of NPN silicon planar medium power transistors in SOT23 package. The transistors are available in various models such as BC81716, BC81725, and BC81740, which are complementary to the BC807 series. They have high maximum operating temperature and current carrying capacity, making them suitable for various circuit applications.

File format: PDF Size:36 KB

This document describes the features and characteristics of SOT23 PNP silicon planar medium power transistors, including their part marking details, absolute maximum ratings, and electrical characteristics.

File format: PDF Size:35 KB

BCW66F is a NPN silicon planar medium power transistor in SOT23 package. Its main parameters are maximum collector-emitter voltage 45V, maximum collector-base voltage 75V, maximum emitter-base voltage 5V, maximum collector current 800mA, peak collector current 1000mA, base current 100mA, and working temperature range -55℃ to +150℃.

File format: PDF Size:38 KB

BFQ31A is a SOT23 package NPN silicon planar VHF/UHF transistor with a maximum collector-emitter reverse voltage of 30V, a maximum collector-base reverse voltage of 15V, a maximum emitter-base reverse voltage of 3V, a maximum collector current of 100mA, a maximum base current of 50mA, and a maximum power dissipation of 330mW. The operating temperature range is -55℃ to +150℃.

File format: PDF Size:35 KB

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

File format: PDF Size:198 KB

ZXMN3A06DN8 is a dual 30V N-channel enhancement mode MOSFET from Texas Instruments, which features low on-resistance and fast switching speed, making it ideal for high efficiency, low voltage, power management applications.

File format: PDF Size:56 KB

ZXMN3B04N8 is a low voltage, high efficiency N-channel MOSFET. It features low on-resistance, high switching speed, low threshold, low gate drive voltage and low profile. This device is suitable for DC-DC converters, power management functions, disconnect switches and motor control applications.

File format: PDF Size:155 KB

This is the datasheet for Zetex's ZXMN3B14F, a 30V N-channel enhancement mode MOSFET with low on-resistance and high switching speed, ideal for high efficiency, low voltage, power management applications.

File format: PDF Size:198 KB

This is a document about the new generation of TRENCH MOSFETs products from Zetex. These products combine the benefits of low on-resistance with fast switching speed, making them ideal for high efficiency, low voltage power management applications.

File format: PDF Size:164 KB

This document is about ZXMN6A07F's datasheet. It is a 60V N-CHANNEL ENHANCEMENT MODE MOSFET with low resistance, high switching speed, low threshold, low gate drive, etc. It is suitable for DC-DC Converters, Power Management Functions, Relay and Solenoid driving, Motor control, etc.

File format: PDF Size:1057 KB

This is a N-channel enhancement mode MOSFET from Zetex. It features low on-resistance, fast switching speed, low threshold, low gate drive, and is suitable for high efficiency, low voltage, power management applications.

File format: PDF Size:1021 KB

ZXMN3A01F is a SOT23 package N-channel enhancement mode MOSFET with low ON resistance, fast switching speed, low threshold, low gate drive, ideal for high efficiency, low voltage, power management applications.

File format: PDF Size:1141 KB

This document is about ZXMN3A02N8. It is a new generation of TRENCH MOSFETs from Zetex that combines the benefits of low on-resistance with fast switching speed. It is ideal for high efficiency, low voltage, power management applications.

File format: PDF Size:160 KB

This is the datasheet of ZXMN3A02X8, a N-channel enhancement mode MOSFET from Zetex. It has low on-resistance, fast switching speed, low threshold, low gate drive, low profile SOIC package, and is ideal for high efficiency, low voltage, power management applications.

File format: PDF Size:426 KB

This document describes the features and characteristics of the new generation of TRENCH MOSFETs from Zetex, which combine the benefits of low on-resistance with fast switching speed. They are ideal for high efficiency, low voltage power management applications.

File format: PDF Size:927 KB

ZXMN3A04DN8 is a new generation of TRENCH MOSFETs from Zetex, which combines the benefits of low on-resistance with fast switching speed. It is ideal for high efficiency, low voltage, power management applications.

File format: PDF Size:56 KB

This PDF document introduces a new generation of Trench MOSFETs semiconductor products from Zetex, which utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. It is ideal for high efficiency, low voltage power management applications.

File format: PDF Size:140 KB

The ZXMN2A01E6 is a 20V N-channel enhancement mode MOSFET that features low on-resistance and fast switching speed, making it ideal for high efficiency, low voltage, power management applications.

File format: PDF Size:53 KB

The ZXMN2A02X8 is a N-channel enhancement mode MOSFET from Zetex that offers the benefits of low on-resistance and fast switching speed. This makes it ideal for high efficiency, low voltage, power management applications.

File format: PDF Size:135 KB

This is the datasheet of ZXMN2A03E6, which is a low voltage, high efficiency N-channel enhancement mode MOSFET with low on-resistance and fast switching speed. It is suitable for DC-DC converters, power management functions, disconnect switches and motor control applications.

File format: PDF Size:117 KB