ST STPSC406 handbook

Update: 30 September, 2023

STPSC406 is an ultrahigh performance power Schottky diode from ST. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

Brand: ST

File format: PDF

Size: 103 KB

MD5 Checksum: EF5B220ED5BA8197512AC7A0835AF0EB

Publication date: 09 August, 2012

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PDF Link: ST STPSC406 handbook PDF

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