ST STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs handbook

Update: 01 October, 2023

This is an RF broadband power amplifier demonstration board using 2 x SD2932 N-channel enhancement-mode lateral MOSFETs. The board features include: frequency 87.5-108MHz, supply voltage 48V, output power 650W, gain 19.5dB, efficiency 73%, harmonics <-36dBc, gain flatness ±0.5dB.

File format: PDF

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MD5 Checksum: AAA70339B1F28B4F813A64550CD86F78

Publication date: 07 August, 2012

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PDF Link: ST STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs handbook PDF

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