FAIRCHILD FQA90N15_F109 handbook

Update: 30 September, 2023

FQA90N15_F109 is a N-channel enhancement mode power field effect transistor produced by Fairchild. The device features RDS(on) = 0.018Ω @VGS = 10 V, low gate charge (typical 220nC), low Crss (typical 200pF), fast switching, 100% avalanche tested, improved dv/dt capability, 175°C maximum junction temperature rating, and RoHS compliance.

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File format: PDF

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MD5 Checksum: FD889F231298EB02E9DFE80EF6A0CE2F

Publication date: 12 July, 2012

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PDF Link: FAIRCHILD FQA90N15_F109 handbook PDF