FAIRCHILD FDT459N N-Channel Enhancement Mode Field Effect Transistor handbook

Update: 29 September, 2023

This document describes the features and absolute maximum ratings of the FDT459N N-Channel Enhancement Mode Field Effect Transistor released in March 1998. The transistor is produced using Fairchild's high cell density DMOS technology, which provides extremely low on-state resistance and superior switching performance. It is well-suited for low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

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File format: PDF

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MD5 Checksum: 7480D620FC03D83A10DDA43248A10208

Publication date: 12 July, 2012

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PDF Link: FAIRCHILD FDT459N N-Channel Enhancement Mode Field Effect Transistor handbook PDF