FAIRCHILD FDS8928A Manual

Update: 29 September, 2023

This document describes the features and characteristics of the FDS8928A dual N and P-channel enhancement mode field effect transistor produced in July 1998. These transistors are made using Fairchild's proprietary high cell density DMOS technology, which offers low on-state resistance, superior switching performance, and resistance to transients. They are particularly suitable for low voltage applications, such as notebook computer power management and battery powered circuits.

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MD5 Checksum: 7ABA797971833BF1DD57F918A1A541D2

Publication date: 12 July, 2012

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PDF Link: FAIRCHILD FDS8928A Manual PDF