FAIRCHILD FDC634P Manual

Update: 29 September, 2023

This document describes a P-Channel 2.5V specified MOSFET that uses Fairchild's low voltage PowerTrench process and has been optimized for battery power management applications. The product features include: -3.5A, -20V drain-source current, with RDS(ON) of 80 mΩ @ VGS = -4.5V and 110 mΩ @ VGS = -2.5V; low gate charge (7.2 nC typical); high performance trench technology for extremely low RDS(ON).

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Publication date: 11 July, 2012

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PDF Link: FAIRCHILD FDC634P Manual PDF