FAIRCHILD FCP190N60 FCPF190N60 Manual

Update: 30 September, 2023

FCP190N60 / FCPF190N60 N-Channel MOSFET is a 600V N-Channel MOSFET device from Fairchild Semiconductor Corporation. It has a maximum drain-source voltage of 600V and a maximum gate-source voltage of ±20V. The rated drain current is 20.2A, and the maximum drain current at 100°C is 12.7A. The device supports pulsed operation, with a maximum pulsed drain current of 60.6A. It also supports avalanche breakdown, with a maximum avalanche energy of 400mJ and a maximum avalanche current of 4A.

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File format: PDF

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MD5 Checksum: 1D2C85C260A07940A5258B5F77ADFC59

Publication date: 11 July, 2012

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PDF Link: FAIRCHILD FCP190N60 FCPF190N60 Manual PDF