Update: 01 October, 2023
This Application Note describes a new quantitative method for the determination of ultratrace elemental impurities present in photovoltaic grade silicon using the Agilent 7500cs ICP-MS. Boron (volatile element) and phosphorus (subject to Si-based interferences) are of particular importance to the industry; therefore, special attention was given to the sample pretreatment stage in order to analyze these elements by ICP-MS. Good recov- ery results for all elements validated the sample preparation strategy. Example data for a range of elements present in 13 different Si samples is presented, along with a list of detection limits. B and P can be determined at the low ppb level in the solid and other elements studied can be measured at the ppt level.
File format: PDF
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MD5 Checksum: B2809EBCF860BFBC93002004A0546252
Publication date: 02 July, 2012
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PDF Link: Agilent Ultratrace Analysis of Solar (Photovoltaic) Grade Bulk Silicon by ICP-MS PDF