Update: 29 September, 2023
The document describes the absolute maximum ratings and electrical characteristics of 2SC1212 and 2SC1212A. These are silicon NPN epitaxial low-frequency power amplifier devices suitable for low-frequency power amplifier applications. They have higher collector-to-base and collector-to-emitter voltage ratings, lower emitter-to-base voltage rating, maximum collector current of 1A, and maximum collector power dissipation of 8W. In terms of electrical characteristics, the devices have higher collector-to-base and collector-to-emitter breakdown voltages, lower collector cutoff current, higher DC current transfer ratio, moderate base-to-emitter voltage and collector-to-emitter saturation voltage, and higher gain bandwidth product. Additionally, the document provides grouping information for the devices.
File format: PDF
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MD5 Checksum: 7605CA4B0D5DC00EFF64862DB6BAF709
Publication date: 07 June, 2012
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PDF Link: HITACHI 2SC1212 2SC1212A Manual(1) PDF