intersil ACTS00MS Data Sheet

Update: 28 September, 2023

The document describes the features of the ACTS00MS radiation hardened quad 2-Input NAND gate. It utilizes 1.25 micron radiation hardened SOS CMOS technology and can withstand a total dose of 300K RAD (Si) radiation. It has high single event upset (SEU) immunity, with an error rate of less than 1 x 10-10 Errors/Bit-Day (Typ). The device uses high-speed CMOS/SOS technology and has lower power consumption compared to ALSTTL logic. It operates in a military temperature range of -55°C to +125°C.

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File format: PDF

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MD5 Checksum: 09DD846BFB5CB0C825A9CE3AAD1A3E45

Publication date: 06 June, 2012

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PDF Link: intersil ACTS00MS Data Sheet PDF