HITACHI 2SA1029 2SA1030 Manual(1)(1)

Update: 29 September, 2023

2SA1029 and 2SA1030 are silicon PNP epitaxial transistors suitable for low frequency amplifiers. They are complementary pairs with 2SC458 and 2SC2308. The features and characteristics include: collector to base voltage ranging from -30V to -55V, collector to emitter voltage ranging from -30V to -50V, emitter to base voltage of -5V, collector current of -100mA, emitter current of 100mA, collector power dissipation of 300mW, and maximum operating temperature of 150°C.

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MD5 Checksum: 6EDC491DE8DC3099F42A1E4768B4E7FF

Publication date: 01 June, 2012

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PDF Link: HITACHI 2SA1029 2SA1030 Manual(1)(1) PDF