Samsung K4D64163HF handbook

Update: 30 September, 2023

K4D64163H is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.2GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

Brand: SAMSUNG

File format: PDF

Size: 162 KB

MD5 Checksum: E2EE8BBED03E95B72F9799013376D374

Publication date: 08 May, 2012

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PDF Link: Samsung K4D64163HF handbook PDF

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