Update: 29 September, 2023
This document introduces the Radiation Hardened MOSFET series developed by Intersil, specifically designed for commercial and military space applications. These products have enhanced immunity to Single Event Effects (SEE), particularly Single Event Gate Rupture (SEGR), combined with 100K RADS of total dose hardness, making them ideal for harsh space environments. The MOSFET series includes N-Channel and P-Channel devices with a variety of voltage, current, and on-resistance ratings. Numerous packaging options are available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. It can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data she
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Publication date: 04 May, 2012
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PDF Link: intersil FSYA450D FSYA450R handbook PDF