Update: 30 September, 2023
FQP6N60C/FQPF6N60C 600V N-Channel MOSFET is a high efficiency power field effect transistor produced by Fairchild Semiconductor Corporation. It features 5.5A of maximum continuous current, 600V of maximum drain-source voltage, 2.0Ω of typical on-state resistance, 16 nC of typical gate charge, and 7 pF of typical reverse output capacitance. This device is suitable for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
File format: PDF
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MD5 Checksum: C7FB0CAAA5C985BC0BF348A3BAAB677B
Publication date: 12 April, 2012
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PDF Link: FAIRCHILD FQP6N60C/FQPF6N60C Manual PDF