Update: 29 September, 2023
This document describes the features and characteristics of the FQP85N06 60V N-Channel MOSFET released in May 2001. These power field effect transistors are produced using Fairchild's proprietary DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in the avalanche and commutation mode. They are suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
File format: PDF
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MD5 Checksum: 78FCAB92D68104CB2758C8868D0D8C83
Publication date: 11 April, 2012
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PDF Link: FAIRCHILD FQP85N06 Data Sheet PDF