Update: 29 September, 2023
This document describes the features and characteristics of the 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistors in November 1995. These transistors are produced using Fairchild's proprietary high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
File format: PDF
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MD5 Checksum: 7AC9C95719498FADDB4540DB3A058609
Publication date: 11 April, 2012
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PDF Link: FAIRCHILD 2N7000 2N7002 NDS7002A handbook PDF