SAMSUNG K4S643233H - F(H)E/N/G/C/L/F handbook(1)(1)

Update: 30 September, 2023

K4S643233H is a synchronous high data rate dynamic random access memory produced by Samsung. It has a storage capacity of 67,108,864 bits and is organized as 4 x 524,288 words by 32 bits. It is manufactured using Samsung's high-performance CMOS technology. The memory supports 3.0V and 3.3V power supplies and can operate in commercial temperature range of -25℃~70℃ and extended temperature range of -25℃~85℃.

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File format: PDF

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MD5 Checksum: 5340FE2717DF47273F6B68837DA01BC9

Publication date: 01 April, 2012

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PDF Link: SAMSUNG K4S643233H - F(H)E/N/G/C/L/F handbook(1)(1) PDF