Update: 30 September, 2023
NXP BUJ and PHx series of high voltage power bipolar transistors use planar technology that delivers industry-leading cost-performance ratios. The high-voltage (up to 1200 V) capability is suitable for push-pull technologies. Fast switching times and low VCEsat ratings combine to reduce switching and conduction losses. The well-controlled hFE parameter reduces the need for banding or selection, making design-in easier and extending reliability. Versions with integrated diodes reduce component count and simplify the design even further.
File format: PDF
Size: -
MD5 Checksum: F365ADC8E0B35CC46AEA4A9B8F9041F5
Publication date: 22 March, 2012
Downloads: -
PDF Link: NXP high voltage power bipolar transistors BUJ PHx series Manual PDF