The SMP1000G-KP is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. It has large active area and high sensitivity, but slow speed. The metal can and isolated photodiode ensure a rugged device with a high degree of immunity to conducted and radiated electrical interference.
The SMP1000G-JQ is a large Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The device has a greater ultra-violet light transmission, thus extending the useful spectral range. It also features high sensitivity, excellent linearity, low noise and widest spectra.
SMP1000G-JP is a large Silicon P.I.N. photodiode produced by Semelab plc, incorporated in a hermetic metal can package. It has high sensitivity, good linearity, low noise and wide spectral response, suitable for high sensitivity light measurement applications
1N4001CSM4 is a general purpose rectifier diode produced by Semelab. It is packaged in a ceramic surface mount package and has high reliability. The diode has a reverse voltage rating of 50 V and a rated current of 1 A.
BC378 is a Bipolar NPN device produced by Semelab. Its maximum working voltage is 25V and the maximum continuous current is 1A. The device is packaged in a TO18 metal package and has a cylindrical appearance with dimensions of 5.84mm*5.31mm*4.95mm.
2N7091 is a P-channel enhancement mode transistor in TO-257AB hermetic package. It has simple drive requirements and is suitable for high reliability applications.
This document describes the features and characteristics of the 2N7085 model, including maximum operating voltage, maximum current, maximum power, etc.
2N7081–220M–ISO is a N-channel power MOSFET produced by Semelab plc. Its features are TO–220 isolated hermetic package, low RDS(ON), and simple drive requirements.
The 2N7002CSM is an N-channel enhancement mode MOS transistor produced by Semelab. It has a maximum breakdown voltage of 60V and a drain-source on-resistance of 7.5 ohms. The maximum operating temperature is 150°C.
The 2N7000CSM is a N-channel enhancement mode MOS transistor produced by Magnatec. Its features are V(BR)DSS=60V, RDS(ON)=5WWWW, ID=200mA. The transistor is packaged in a ceramic surface mount package with screening options.
The document provides information about the features and characteristics of the BFT80 bipolar PNP device, including maximum working voltage, maximum working current, and amplification factor.
