SAMSUNG Manuals

S3C72M5/C72M7/C72M9/P72M9 is a single-chip CMOS microcontroller from Samsung Electronics. It features the latest Samsung SAM47 (Samsung Arrangeable Microcontrollers) CPU core, high performance and high integration. This series of products has up to 1280 dot LCD direct drive capability, segment expansion circuit, 8-bit and 16-bit timer/counter, and serial I/O, which is suitable for various applications that require LCD functions.

S3C72M5/C72M7/C72M9 is a single-chip CMOS microcontroller from Samsung, using the company's newest 4-bit CPU core, SAM47 (Samsung Arrangeable Microcontrollers). It offers high performance and low power consumption. The S3C72M5/C72M7/C72M9 features a 80 SEG × 16 COM, 88 SEG × 8 COM LCD display controller/driver, as well as 3,584 × 4-bit RAM, 16,384/24,576/32,768 × 8-bit ROM, 51 I/O pins and 9 vectored interrupts.

The K4S281632M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programma- ble burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor- mance memory system applications.

K4S281632M is a 2M x 16Bit x 4 Banks Synchronous DRAM produced by Samsung. It has JEDEC standard 3.3V power supply, LVTTL compatibility and four memory operation functions.

K4S281633D-RL(N) Rev. 0.6 Nov. 2001 CMOS SDRAM Preliminary 8Mx16 Revision 0.6 November 2001 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V & 3.3V/3.3V)

K4S281633D-RL(N) Rev. 0.6 is a 2001 November released CMOS SDRAM with 8Mx16, 54CSP, VDD/VDDQ 3.0V/3.0V & 3.3V/3.3V

The K4S283233F is a 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications.

K4S283233F is a synchronous high data rate Dynamic RAM with features such as 3.0V & 3.3V power supply, LVCMOS compatible with multiplexed address, four banks operation, and MRS cycle with address key programs, etc.

The document details the Samsung 256Mb E-die SDRAM model, frequency, interface, package, etc.

The K4S560432E / K4S560832E / K4S561632E is a 268,435,456 bit synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth applications.

The K4S643232C is a 67,108,864-bit synchronous high-data-rate dynamic random-access memory organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high-performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

The document provides technical information and features of three models of Samsung flash memory products: K9F1208R0C, K9F1208U0C, and K9F1208B0C.

K9F1208U0A and K9F1216U0A are 64M x 8 bit and 32M x 16 bit NAND flash memory chips produced by Samsung Electronics, supporting 1.8V and 3.3V power supply.