ST Manuals

The STGB7NB60HD N-CHANNEL 7A - 600V DPAK PowerMESH IGBT is a high-performance power IGBT device from STMicroelectronics. It features high input impedance, low on-voltage drop, low gate charge, high current capability, very high frequency operation and low off-losses, making it suitable for high frequency motor controls, SMPS and PFC applications.

STGP7NB60K-STGP7NB60KFP-STGD7NB60K STGP7NB60KD-STGP7NB60KDFP-STGB7NB60KD is a N-channel 7A-600V-TO-220/FP/DPAK/D2PAK PowerMESH™ IGBT produced by STMicroelectronics, with outstanding performances such as high input impedance (voltage driven), low on-voltage drop (Vcesat), low gate charge, high current capability, off losses include tail current, frequency operation, short circuit rated, etc., and is applied to high frequency motor control, SMPS and PFC applications.

STMicroelectronics STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH™ IGBT is an IGBT launched by STMicroelectronics. It features low voltage drop, low switching loss, low recovery energy, high frequency and fast recovery. It is suitable for high frequency inverters, SMPS and PFC applications.

STGD3NB60H is a high-performance N-channel IGBT launched by STMicroelectronics, with high input impedance, low on-voltage drop, low gate charge, high current capability, very high frequency operation, tail current and other characteristics.

STGD3NB60KD is a high power IGBT designed by STMicroelectronics, with a maximum voltage of 600V and a maximum current of 3A. The rated working temperature is -65 to 150°C.

STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances using the latest high voltage technology based on a patented strip layout. These IGBTs have very low switching times and are suitable for high frequency applications (<20KHZ). The document describes the features and characteristics of the STGP3NB60M and STGD3NB60M models.

STGD3NB60SD is a high voltage IGBT produced by STMicroelectronics. Its rated voltage is 600 V and its rated current is 3 A. It is packaged in a DPAK package.

This document describes the features and characteristics of the STGD3NB60S N-CHANNEL 3A - 600V DPAK Power MESH IGBT, including high input impedance, very low on-voltage drop (Vcesat), high current capability, and surface-mounting DPAK (TO-252) power package.

This document describes the features and characteristics of the STMicroelectronics STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK internally clamped PowerMESH™ IGBT, released on January 13, 2005. These include high input impedance, low on-voltage drop (Vcesat), high current capability, off losses including tail current, and high voltage clamping features.

stgd6nc60hd is a 6a - 600v n-channel igbt produced by stmicroelectronics. it has the characteristics of low voltage drop, low on-state losses, low recovery energy, high frequency operation, etc.

STGD7NB120S-1 is a N-CHANNEL 7A - 1200V IPAK Power MESH IGBT produced by STMicroelectronics. It has high input impedance (voltage driven), very low on-voltage drop (Vcesat), high current capability and off losses including tail current. The product is suitable for applications such as light dimmer, inrush current limitation and motor control.

This document provides preliminary information on a new product currently in development or undergoing evaluation. The product is a high-voltage power MOSFET with features such as high input impedance, low on-voltage drop, low gate charge, high current capability, and high frequency operation.

STGD7NB60H is an N-channel IGBT produced by ST company. The rated voltage is 600V and the rated current is 7A. The working frequency can reach 50kHz.

STGD7NB60H-1 is a N-channel 7A - 600V IPAK PowerMESH IGBT with outstanding perfomances designed by STMicroelectronics based on a patented strip layout. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). It is used in high frequency motor controls, SMPS and PFC in both hard switch and resonant topologies.