INFINEON Manuals (Others)

SPD08N50C3 is a new type of MOS power transistor launched by Infineon. It features extremely low RDS(on), extremely low gate charge, extreme dv/dt rating, extremely low effective capacitance and improved transconductance.

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BAR81 is a shunt RF switching diode produced by Rogers Corporation. It has the characteristics of high shunt signal isolation and low shunt insertion loss, and is widely used in high performance RF switches.

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This document describes the features of SPP12N50C3, SPI12N50C3, and SPA12N50C3 Cool MOS™ power transistors. These transistors utilize a revolutionary high voltage technology and have ultra low gate charge, periodic avalanche rating, and extreme dv/dt rating. Additionally, they have ultra low effective capacitances, improved transconductance, and fully isolated packaging. The document also lists the model numbers, packages, and ordering codes of these products, as well as their maximum ratings and thermal characteristics.

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IPP90R340C3 CoolMOS™ power transistor features the lowest RON x Qg figure of merit and extreme dv/dt rating with high peak current capability. It is qualified according to JEDEC1) for target applications and compliant with RoHS. It features lead-free lead plating and offers the world's best R DS,on and ultra-low gate charge. CoolMOS™ 900V is designed for: quasi resonant flyback/forward topologies, PC silverbox and consumer applications, and industrial SMPS.

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The document describes the features and characteristics of the 2005-10-11 BFG235 1 NPN Silicon RF Transistor, which is suitable for low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz, and has an integrated emitter ballast resistor.

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The document describes the features and characteristics of a product named VDS.

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This document is the specification of TDA 5212

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This document describes the features and characteristics of the IPA60R299CP CoolMOS® power transistor, including the lowest figure-of-merit RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, etc.

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This document introduces the characteristics of SPA15N65C3 CoolMOSTM power transistor, including low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications and lead-free lead plating; RoHS compliant.

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The document describes the role of SVHCs in products and packaging and provides relevant safety data.

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This document is a datasheet for the TDA5250 D2 ASK/FSK 868MHz wireless transceiver. It describes the features and characteristics of the product.

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This datasheet provides the parameters of IPP50R299CP, including the maximum voltage, maximum current, minimum current, maximum power, maximum temperature, etc.

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BSP129 is an N-channel, depletion mode, dv/dt rated small signal transistor available with a VGS(th) indicator on reel. It complies with RoHS and features lead-free lead plating.

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This document describes the features and characteristics of the SPD06N60C3 CoolMOSTM power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, high peak current capability, ultra low effective capacitances, extreme dv/dt rated, and improved transconductance.

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SDT12S60 is the world's first 600V Schottky diode, using revolutionary semiconductor material - Silicon Carbide, with benchmark switching behavior, no reverse recovery, no temperature influence on switching behavior, no forward recovery

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This document introduces the IKP15N60T TrenchStop® series power semiconductors, which are low-loss and fast-recovery anti-parallel EmCon HE diodes. The product has a very low VCE(sat) value, maximum junction temperature of 175°C, and short circuit withstand time of 5µs. It is designed for applications such as frequency converters and uninterrupted power supply. The TrenchStop® and Fieldstop technology for 600 V applications offers tight parameter distribution, high ruggedness, temperature stable behavior, and very high switching speed.

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The BTS 4141N is a high-side power switch product from Infineon, which has short-circuit protection, current limiting, overload protection, overvoltage protection, undervoltage shutdown, switching inductive loads, output negative voltage clamping, CMOS compatible input, thermal shutdown, ESD protection, loss of GND and loss of Vbb protection, very low standby current, reverse battery protection with external resistor and improved electromagnetic compatibility (EMC).

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This document describes the features and characteristics of the BAS116 silicon low leakage diode. It is suitable for low-leakage applications and medium speed switching times. It has a reverse voltage of 80V and a forward current of 250mA. Additionally, the diode has low reverse current and fast reverse recovery time.

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This document is about PROFET® BTS 6133D data sheet. The product has reverse battery protection, reverse operation, short circuit protection, current limiting, overload protection, thermal shutdown, overvoltage protection, loss of ground protection, loss of Vbb protection, low standby current, fast demagnetization etc.

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