INFINEON Manuals (Others)

IKP01N120H2 is a high-speed power semiconductor product with a soft, fast recovery anti-parallel EmCon HE diode. It is designed for applications such as switch-mode power supplies, lamp ballasts, and zero-voltage switching converters in soft-switching/resonant topologies. The product features second-generation HighSpeed-Technology for 1200V applications, offering loss reduction in resonant circuits, temperature stable behavior, parallel switching capability, tight parameter distribution, and optimized Eoff for IC=1A.

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IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode is a new type of Schottky diode produced by IDT. It has no reverse recovery/no forward recovery, high surge current capability, lead-free welding and other features. It is suitable for CCM PFC, motor drive and other fast switching applications.

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This is a datasheet of a MOSFET product of Fairchild semiconductor. It details the parameters of the product.

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SPN02N60C3 CoolMOSTM Power Transistor features new revolutionary high voltage technology, ultra low gate charge, ultra low effective capacitances and extreme dv/dt rating.

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This is an 8-bit single-chip microcontroller from Infineon Technologies AG, model number XC886/888CLM.

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The IPP90R1K0C3 CoolMOS™ Power Transistor has the lowest figure-of-merit RON x Qg, extreme dv/dt ratings, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating, RoHS compliant, ultra low gate charge. CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS.

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The SPA15N60CFD is a power transistor produced by STMicroelectronics. It has an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, and has been qualified according to JEDEC1) for target applications. It is designed for softswitching PWM stages and LCD and CRT TVs.

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IPP60R199CP CoolMOSTM power transistors feature the lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rating, high peak current capability, and are qualified according to JEDEC1) for target applications. They have Pb-free lead plating and are RoHS compliant. CoolMOS CP is specially designed for hard switching topologies in server and telecom applications.

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The SPW47N60CFD is a CoolMOSTM power transistor with new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, periodic avalanche rating, qualified according to JEDEC1) for target applications, lead-free lead plating; RoHS compliant.

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This datasheet provides the technical specifications of the BUP 213 IGBT, including maximum ratings, dynamic characteristics, and static characteristics.

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IKW15T120 is a high power IGBT module from Infineon, using NPT technology, with low EMI, low gate charge, low loss, short circuit withstand time of 10 microseconds, very soft, fast recovery anti-parallel EmCon HE diode, etc., suitable for frequency converters and uninterruptible power supplies.

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BSP135 SIPMOS® is a N-channel, depletion mode, dv/dt rated small-signal transistor with a maximum rating of T j=25°C, unless otherwise specified.

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This document introduces the characteristics and parameters of Panasonic 1200V 600A IGBT.

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This document describes the features and applications of PROFET® ITS 640S2 Infineon Technologies AG, including short circuit protection, current limitation, proportional load current sense, CMOS compatible input, etc.

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The BAS21 is a silicon switching diode from ON Semiconductor that is characterized by its high switching speed and high breakdown voltage.

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The BSS138W G SIPMOS® small-signal transistor features N-channel, enhancement mode, logic level, dv/dt rated, Pb-free lead-plating; RoHS compliant

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This document describes the features and characteristics of IPD60R520CP CoolMOSTM power transistor, including lowest figure-of-merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc.

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IPA60R520CP CoolMOSTM power transistor features the lowest RON x Qg figure-of-merit, ultra-low gate charge, extreme dv/dt rating and high peak current capability. It is qualified according to JEDEC1) for target applications and complies with RoHS.

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TDA5251 F1 ASK/FSK 315MHz Wireless Transceiver Preliminary Specification

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