INFINEON Manuals (Others)

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This document describes the features and characteristics of the BSP 300 SIPMOS® small-signal transistor, released in 2005. It includes N channel, enhancement mode, avalanche rating, VGS(th) of 2.0-4.0V, etc. The document also provides maximum ratings, thermal resistance, and static characteristics.

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BAT165 is a medium power AF Schottky diode manufactured by ON Semiconductor. It has a forward current of 750 mA and a reverse voltage of 40 V. It is suitable for low-loss, fast-recovery, meter protection, bias isolation and clamping applications.

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SKP10N60A is an IGBT module from Infineon with a 600V rating and a maximum output current of 10A. It has a low switching loss and a rated junction temperature of 150°C. The product is manufactured using NPT-technology and is highly reliable. It is also equipped with a reverse-parallel EmCon diode for fast recovery. SKP10N60A is suitable for various motor control and inverter applications.

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The BSC042N03S OptiMOS®2 power transistor has fast switching, excellent current conduction, low on-resistance, excellent thermal resistance, and good dv/dt characteristics, which are suitable for notebook DC/DC converters and other applications.

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This datasheet mainly introduces the features and characteristics of IPD20N03L and IPU20N03L, including product model, package, maximum ratings, electrical characteristics, etc.

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IKA03N120H2 is a power semiconductor device produced by Infineon. This device uses the second-generation HighSpeed technology and has a soft recovery, fast recovery anti-parallel EmCon HE diode. It is suitable for television horizontal line deflection.

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IPD50R399CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, Pb-free lead plating, and RoHS compliance. It is designed for hard and softswitching SMPS topologies, DCM PFC for lamp ballast, and PWM for lamp ballast and PDP/LCD TVs.

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This document is about FS50R12KE3 IGBT-Modules technical information, it includes various characteristics parameters of this product.

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BUP 313D IGBT is an IGBT with an integrated diode, with low forward voltage drop, high switching speed, low tail current, latch-up free and high reliability.

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The TLE 4240 G is a monolithic integrated low-drop LED Driver in the very small SMD package SCT 595. It is designed to supply LEDs under the severe conditions of automotive applications. The output is a constant current source which drives LEDs to 60 mA within an accuracy of ± 20%.

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BSS670S2L is a N-channel enhancement mode logic level MOSFET produced by ON Semiconductor. Its maximum voltage is 55V, the minimum on-resistance is 650mΩ, and the maximum current is 0.54A.

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SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor features 650 V VDS and 0.19 Ohm RDS(on), the lowest RDS(on) in TO-220 worldwide. It also has ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability and improved transconductance.

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This datasheet mainly introduces the features and characteristics of SPS01N60C3 Cool MOS™ power transistor

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This PDF file is the datasheet of SPP20N60S5 Cool MOS™ Power Transistor. The product has the following features: new revolutionary high voltage technology, world's best RDS(on) in TO 220, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.

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SPW20N60S5 is a high voltage MOSFET with a maximum voltage of 600V and a maximum current of 20A. It has ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances and improved transconductance.

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IKA10N60T is an IGBT from Infineon with a very low Vce(sat) of 1.5V, a maximum junction temperature of 175°C and a short circuit withstand time of -5µs. This product is suitable for applications such as washing machines, air conditioners, inverters and variable speed drives.

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This document describes the features and characteristics of the BSO4420 OptiMOS small-signal transistor, including N-channel, logic level, very low on-resistance RDS(on), excellent gate charge x RDS(on) product (FOM), avalanche and dv/dt rating. The transistor is ideal for fast switching applications.

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