INFINEON Manuals (Others)

IKP06N60T is an IGBT product launched by Infineon. Its features are very low VCE(sat), maximum junction temperature 175 °C and short circuit withstand time-5µs. It is suitable for applications such as variable speed drive, air conditioner and induction cooking.

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This document describes the features and characteristics of the SPD06N80C3 Cool MOS™ power transistor, including high voltage technology, low RDS(on), ultra-low gate charge, periodic avalanche rating, and extreme dv/dt rating.

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This document introduces the features and characteristics of SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS Power-Transistor, including maximum current, on-resistance, pin package, model, maximum operating temperature, power consumption, voltage, and ambient temperature.

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This document introduces the preliminary specification of TDA5255 E1 ASK/FSK 434MHz wireless transceiver

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The IPA50R399CP CoolMOS is a power transistor with the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, RoHS compliant, and qualified according to JEDEC0) for target applications. CoolMOS CP is designed for: • Hard and softswitching SMPS topologies • DCM PFC for Lamp Ballast • PWM-Stages Lamp Ballast, LCD and PDP TV

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The document describes the features and characteristics of the SPD04N80C3 Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, improved transconductance, etc.

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BSO104N03S is a N-channel MOSFET from Infineon with excellent switching speed and low on-resistance, suitable for notebook DC/DC converters and other applications.

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This document is a datasheet for the XC164GM 16-bit single-chip microcontroller with C166SV2 core from Infineon Technologies AG. It provides information about the features and characteristics of the microcontroller.

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The features of IPW50R399CP CoolMOSTM Power Transistor include the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, RoHS compliant, and qualified according to JEDEC1) for target applications. CoolMOS CP is designed for: Hard and soft switching SMPS topologies, DCM PFC for Lamp Ballast, PWM for Lamp Ballast, LCD & PDP TV.

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PROFET® BTS 410 E2 is a high side power switch with overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection (including load dump), fast demagnetization, reverse battery protection, undervoltage and overvoltage shutdown with auto-restart and hysteresis, open drain diagnostic output, open load detection in ON-state, CMOS compatible input, loss of ground and loss of Vbb protection, electrostatic discharge (ESD) protection.

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IPS50R520CP is a CoolMOSTM power transistor that features the lowest RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, and RoHS compliance.

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IPP60R165CP CoolMOSTM power transistor features the lowest RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, lead-free lead plating, RoHS compliant. CoolMOS CP is specially designed for: Hard switching topologies for Server and Telecom.

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This document describes the features of SPW35N60CFD CoolMOSTM power transistor, including high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, etc.

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The document is a product specification sheet for VDS, describing its features and characteristics.

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This document is the specification of NXP 10-05 Rev. 2.4 P-Channel MOSFETs

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The BAR64 series is a high voltage current controlled RF resistor for RF attenuator and switches. It features a frequency range above 1MHz up to 6GHz, very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.17 pF), low forward resistance (typ. 2.1 Ω @ 10 mA) and very low signal distortion

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SPP80N08S2L-07 and SPB80N08S2L-07 are N-channel enhancement mode Logic Level MOSFETs with a rated voltage of 75V and a maximum RDS(on) of 6.8mΩ and a rated current of 80A.

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This document is a datasheet for 75452-14 Rev. 2.5 P switch-type power module, which mainly introduces the package, pin definition, electrical characteristics, power characteristics, package size and other information of the module.

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BSS123 is a N-channel enhancement mode logic level dv/dt rated small-signal transistor.

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