INFINEON Manuals (Others)

The document describes the features and characteristics of IKW40T120 TrenchStop series power semiconductors. The device uses TrenchStop and Fieldstop technology and is equipped with a soft, fast recovery anti-parallel EmCon HE diode. It is designed for applications such as frequency converters and uninterrupted power supply. It offers very tight parameter distribution and high ruggedness with temperature stable behavior. The NPT technology allows for easy parallel switching due to positive temperature coefficient in VCE(sat). The device has low EMI, low gate charge, and a very soft, fast recovery anti-parallel EmCon HE diode. It is qualified according to JEDEC1 standards and is lead-free and RoHS compliant.

File format: PDF Size:878 KB

SDP10S30 and SDT10S30 are thinQ! SiC Schottky Diodes, which have revolutionary semiconductor material - Silicon Carbide. Their switching behavior is benchmark, no reverse recovery, no temperature influence on the switching behavior, and no forward recovery.

File format: PDF Size:6861 KB

This document describes the features and characteristics of the Power Management & Drives Control integrated Power System (CIPOS™) IKCS12F60AA product from Infineon Technologies.

File format: PDF Size:515 KB

This document is the target data sheet of BTS 5242-2L Smart High-Side Power Switch, which details the features and characteristics of the product.

File format: PDF Size:1028 KB

This is the technical information of FP50R12KE3 module, including electrical properties, maximum rated values, transistor and diode parameters.

File format: PDF Size:124 KB

XC866 8-Bit Single-Chip Microcontroller is a product of Infineon Technologies AG, released in December 2006, containing product features and characteristics for reference.

File format: PDF Size:1698 KB

This document describes the features and characteristics of the CoolSET-F2 series, as well as the ICE2A0565/165/265/365, ICE2B0565/165/265/365, ICE2A0565Z, ICE2A180Z/280Z, ICE2A765I/2B765I, ICE2A765P2/ICE2B765P2 models.

File format: PDF Size:1386 KB

PROFET® BTS 740S2 is a dual channel high side power switch with diagnostic feedback and current sense. It features a 5.0-34V operating voltage, a 30mΩ on-state resistance and a 24A load current limit.

File format: PDF Size:302 KB

This document is a data sheet for the C167CR and C167SR 16-bit single-chip microcontrollers. It describes the features and characteristics of these microcontrollers.

File format: PDF Size:1478 KB

This datasheet provides the parameters of SPP07N60C3, SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor, including maximum voltage, on-resistance, rated current, package type, model, ordering code, etc.

File format: PDF Size:1297 KB

This document describes the features and characteristics of the IPI60R600CP CoolMOSTM power transistor, including the lowest R ON x Qg value, ultra-low gate charge, extreme dv/dt rating, high peak current capability, and more.

File format: PDF Size:270 KB

File format: PDF Size:0 KB

This document describes the features and characteristics of the IPB60R125CP CoolMOSTM power transistor, including the lowest figure-of-merit RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, etc. The product is specially designed for hard switching topologies in the server and telecom industries.

File format: PDF Size:336 KB

This document describes the features and characteristics of two Cool MOS™ power transistors, SPP17N80C3 and SPA17N80C3, including new high voltage technology, worldwide best RDS(on) in TO 220, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, improved transconductance, etc.

File format: PDF Size:613 KB

BTS409L1 is a high side power switch produced by Infineon Technologies AG. It has overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection, fast demagnetization and other features. It is applied to 12 V and 24 V DC grounded loads and can replace mechanical relays, fuses and discrete circuits.

File format: PDF Size:305 KB

BAR50 series is a silicon PIN diode produced by Texas Instruments. It has low capacitance, low forward resistance and low harmonics, which is suitable for RF switch and attenuating applications.

File format: PDF Size:472 KB

This document describes the features and characteristics of the SMBT2222A/MMBT2222A NPN silicon switching transistor released in 2006, including high DC current gain and low collector-emitter saturation voltage.

File format: PDF Size:173 KB

IPA60R125CP CoolMOS is the world’s smallest N-channel MOSFET with a RDS(on) of 0.125 Ω. It features ultra-low gate charge, extreme dv/dt rating, high peak current capability and is qualified according to JEDEC for target applications and is Pb-free lead plating and RoHS compliant.

File format: PDF Size:282 KB

SPP08N80C3, SPI08N80C3 SPA08N80C3 is a 800 V low on-resistance, high current power transistor, using new revolutionary high voltage technology, features ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra-low effective capacitances and improved transconductance.

File format: PDF Size:1470 KB

This document is about the specifications of a certain product, including the rated input voltage, rated output voltage, maximum output current, operating temperature range, maximum conversion efficiency, etc.

File format: PDF Size:1775 KB