MITSUBISHI Manuals

MITSUBISHI IGBT MODULES CM75RX-24S Manual

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MITSUBISHI IGBT MODULES CM150RX-24S Manual

CM150RX-24S is a high power switching use insulated IGBT module, its maximum collector current is 150A, maximum collector-emitter voltage is 1200V, maximum working temperature is 175℃.

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MITSUBISHI IGBT MODULES CM75TX-24S Manual

CM75TX-24S is a 75A high power IGBT module with a maximum junction temperature of 175 degrees, suitable for AC motor control, motion control, power supply and other fields.

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MITSUBISHI IGBT MODULES CM100TX-24S Manual

CM100TX-24S is a Mitsubishi electric IGBT module with a rated DC current of 100A, a rated DC voltage of 1200V and a maximum junction temperature of 175°C. The module uses a non-plated copper base plate and tin-plated terminals, and complies with RoHS regulations. It is suitable for AC motor control, motion/servo control, power supply and other applications.

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MITSUBISHI IGBT MODULES CM150DX-24S Manual

CM150DX-24S is an IGBT module from MITSUBISHI. Its maximum collector current is 150A, maximum collector-emitter voltage is 1200V and maximum working temperature is 175℃.

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MITSUBISHI IGBT MODULES CM150TX-24S Manual

This document describes the features and characteristics of the MITSUBISHI IGBT module CM150TX-24S. The module is designed for high power switching applications and features an insulated design, flat base type, copper base plate, tin plated pin terminals, etc. The module is RoHS Directive compliant and UL1557 recognized.

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MITSUBISHI IGBT MODULES CM200DX-24S Manual

This document describes the features and characteristics of the MITSUBISHI IGBT module CM200DX-24S, which is suitable for high power switching applications.

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MITSUBISHI IGBT MODULES CM300DX-24S Manual

This document describes the features and characteristics of Mitsubishi IGBT module CM300DX-24S, including high power switching use, insulated type, etc.

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MITSUBISHI IGBT MODULES CM450DX-24S Manual

CM450DX-24S is a Mitsubishi IGBT module with a maximum voltage of 1200V, a maximum current of 450A, and a maximum operating temperature of 175°C.

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MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0952P Manual

This document shows the RF characteristics data of MGF0952P

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MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0951P Manual(1)

This is an application note for MGF0951P RF characteristics data

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MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0921A Manual(1)

This is an application note that shows the RF characteristics data of MGF0921A, including output power, input voltage, input current, etc.

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MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0915A Manual(1)

This document shows the RF characteristics data of MGF0915.A, including evaluation conditions and results, as well as the equivalent circuit diagram.

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MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0951P Manual

This application note shows the RF characteristics data of MGF0951P, including evaluation conditions and results, in the frequency range of 2.3-2.4GHz.

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MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0921A Manual

This application note shows the RF characteristics data of MGF0921A

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MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0915A Manual

This document shows the RF characteristics data of MGF0915A, including evaluation results of parameters such as CW, ACLR, and IMD.

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MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0951P RF TEST DATA for Freq.=2.11-2.17GHz BAND Manual

This document shows the RF characteristics data of MGF0951P, including evaluation conditions and results, for the frequency range of 2.11-2.17GHz.

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MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0921A RF TEST DATA for Freq.=2.11-2.17GHz BAND Manual

This application note shows the RF characteristics data of MGF0921A

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MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0915A RF TEST DATA for Freq.=2.11-2.17GHz BAND Manual

This is an application note about the RF characteristics of MGF0915A. It includes the test conditions, test results and equivalent circuit of the product.

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MITSUBISHI ELECTRIC SEMICONDUCTOR MGF0907B RF TEST DATA for Freq.=2.11-2.17GHz BAND Manual

This is a RF characteristics data of MITSUBISHI MGF0907B

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